AS4C256M16D3B-12BAN Alliance Memory

AS4C256M16D3B-12BAN electronic component of Alliance Memory
AS4C256M16D3B-12BAN Alliance Memory
AS4C256M16D3B-12BAN DRAM
AS4C256M16D3B-12BAN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AS4C256M16D3B-12BAN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C256M16D3B-12BAN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C256M16D3B-12BAN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 4G 1.5V 800MHz 256Mx16 DDR3 A-Temp
Datasheet: AS4C256M16D3B-12BAN Datasheet (PDF)
Price (USD)
N/A

Obsolete

Availability 0
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 12.4342
10$ 11.0515
25$ 11.0515
50$ 11.0515
100$ 10.1861
250$ 10.017
500$ 9.6887
1000$ 9.639
2000$ 9.639
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the AS4C256M16D3B-12BAN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C256M16D3B-12BAN and other electronic components in the DRAM category and beyond.

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AS4C256M16D3B-12BAN Revision History 4Gb AS4C256M16D3B - 12BAN 96 ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet May. 2018 Rev 1.2 Added in previously omitted data - Page 2 April 2019 -JEDEC Standard Compliant -AEC-Q100 Compliant Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1/41 - Rev.1.2 April 2019AS4C256M16D3B-12BAN Specifications Features - JEDEC Standard Compliant - Double-data-rate architecture two data transfers per clock - AEC-Q100 Compliant cycle - Density : 4G bits - The high-speed data transfer is realized by the 8 bits - Organization : 32M words x 16 bits x 8 banks prefetch pipelined architecture - Package : - Bi-directional differential data strobe (DQS and DQS) is - 96-ball FBGA transmitted/received with data for capturing data at the re- - Lead-free (RoHS compliant) and Halogen-free ceiver - Power supply : VDD, VDDQ = 1.5V 0.075V - DQS is edge-aligned with data for READs center-aligned - Data rate : with data for WRITEs - 1600Mbps - Differential clock inputs (CK and CK) - 2KB page size - DLL aligns DQ and DQS transitions with CK transitions - Row address: A0 to A14 - Commands entered on each positive CK edge data and - Column address: A0 to A9 data mask referenced to both edges of DQS - Eight internal banks for concurrent operation - Data mask (DM) for write data - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - Burst type (BT) : - Posted CAS by programmable additive latency for better - Sequential (8, 4 with BC) command and data bus efficiency - Interleave (8, 4 with BC) - On-Die Termination (ODT) for better signal quality - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11 - Synchronous ODT - CAS Write Latency (CWL) : 5, 6, 7, 8 - Dynamic ODT - Precharge : auto precharge option for each burst access - Asynchronous ODT - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - Multi Purpose Register (MPR) for pre-defined pattern read - Refresh : auto-refresh, self-refresh out - Refresh cycles : - Average refresh period - ZQ calibration for DQ drive and ODT 7.8 s at -40C Tc +85C - Programmable Partial Array Self-Refresh (PASR) 3.9 s at +85C < Tc +95C - RESET pin for Power-up sequence and reset function - SRT range : Normal/extended - Operating case temperature range - Programmable Output driver impedance control - Automotive Tc = -40C to +105C Table 1. Ordering Information Part Number Org Temperature MaxClock (MHz) Package AS4C256M16D3B-12BAN 256Mx16 800 96-ball FBGA Automotive -40C to +105C Table 2. Speed Grade Information Speed Grade CAS Latency tRCD (ns) Clock Frequency tRP (ns) DDR3-1600 800MHz 11 13.75 13.75 Confidential - 2/41 - Rev.1.2 April 2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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