Product Information

AS4C2M32S-6TIN

AS4C2M32S-6TIN electronic component of Alliance Memory

Datasheet
DRAM 64Mb, 3.3V, 166Mhz 2M x 32 SDRAM

Manufacturer: Alliance Memory
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

108: USD 3.2331 ea
Line Total: USD 349.17

0 - Global Stock
MOQ: 108  Multiples: 108
Pack Size: 108
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 108
Multiples : 108

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AS4C2M32S-6TIN
Alliance Memory

108 : USD 3.2331
216 : USD 3.1088

     
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RoHS - XON
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AS4C2M32S 2M x 32 bit Synchronous DRAM (SDRAM) Confidential (Rev. 3.0, May. /2014) Features Overview Fast access time: 5.5/5.5 ns The 64Mb SDRAM is a high-speed CMOS Fast Clock rate: 200/166/143 MHz synchronous DRAM containing 64 Mbits. It is internally configured as a quad 512K x 32 DRAM with Fully synchronous operation a synchronous interface (all signals are registered on Internal pipelined architecture the positive edge of the clock signal, CLK). Each of Four internal banks (512K x 32bit x 4bank) the 512K x 32 bit banks is organized as 2048 rows by Programmable Mode 256 columns by 32 bits. Read and write accesses to - CAS Latency: 2 or 3 the SDRAM are burst oriented; accesses start at a - Burst Length: 1, 2, 4, 8, or full page selected location and continue for a programmed number of locations in a programmed sequence. - Burst Type: Sequential or Interleaved Accesses begin with the registration of a - Burst-Read-Single-Write BankActivate command which is then followed by a Burst stop function Read or Write command. Individual byte controlled by DQM0-3 The SDRAM provides for programmable Read or Auto Refresh and Self Refresh Write burst lengths of 1, 2, 4, 8, or full page, with a Operating temperature range burst termination option. An auto precharge function - Commercial (0 ~ 70C) may be enabled to provide a self-timed row - Industrial (-40 ~ 85C) precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self Single +3.3V 0.3V power supply Refresh are easy to use. Interface: LVTTL By having a programmable mode register, the 86-pin 400 x 875 mil plastic TSOP II system can choose the most suitable modes to package, 0.50mm pin pitch maximize its performance. These devices are well suited for applications requiring high memory bandwidth. - Pb and Halogen Free Table 1. Key Specifications AS4C2M32S -5/6/7 tCK3 Clock Cycle time(min.) 5/6/ ns tAC3 Access time from CLK (max.) 5.5/5.5 ns tRAS Row Active time(min.) 42/49 ns tRC Row Cycle time(min.) 60/70 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C2M32S-6TIN 166MHz 86-pin TSOP II Industrial -40 ~ 85C AS4C2M32S-6TCN 166MHz 86-pin TSOP II Commercial 0 ~ 70C AS4C2M32S-7TCN 143MHz 86-pin TSOP II Commercial 0 ~ 70C AS4C2M32S-5TCN 200MHz 86-pin TSOPII Commercial 0 ~ 70C T: indicates TSOP II package N: indicates Pb and Halogen Free Confidential 1 Rev. 3.0 May. /2014 AS4C2M32S Figure 1. Pin Assignment (Top View) VDD 1 86 VSS 2 85 DQ0 DQ15 VDDQ 3 84 VSSQ DQ1 4 83 DQ14 DQ2 5 82 DQ13 VSSQ 6 81 VDDQ DQ3 7 80 DQ12 DQ4 8 79 DQ11 VDDQ 9 78 VSSQ DQ5 10 77 DQ10 DQ6 11 76 DQ9 VSSQ 12 75 VDDQ 13 74 DQ7 DQ8 NC 14 73 NC VDD 15 72 VSS 16 71 DQM0 DQM1 WE# 17 70 NC 18 69 CAS# NC RAS# 19 68 CLK CS# 20 67 CKE 21 66 NC A9 BA0 22 65 A8 BA1 23 64 A7 A10/AP 24 63 A6 A0 25 62 A5 A1 26 61 A4 A2 27 60 A3 DQM2 28 59 DQM3 VDD 29 58 VSS NC 30 57 NC DQ16 31 56 DQ31 32 55 VSSQ VDDQ DQ17 33 54 DQ30 DQ18 34 53 DQ29 35 52 VDDQ VSSQ DQ19 36 51 DQ28 DQ20 37 50 DQ27 VSSQ 38 49 VDDQ DQ21 39 48 DQ26 DQ22 40 47 DQ25 VDDQ 41 46 VSSQ DQ23 42 45 DQ24 VDD 43 44 VSS Confidential 2 Rev. 3.0 May. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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