X-On Electronics has gained recognition as a prominent supplier of AS4C2M32S-7BCNTR dram across the USA, India, Europe, Australia, and various other global locations. AS4C2M32S-7BCNTR dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C2M32S-7BCNTR

AS4C2M32S-7BCNTR electronic component of Alliance Memory
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Part No.AS4C2M32S-7BCNTR
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 64Mb, 3.3V, 143Mhz 2M x 32 SDRAM
Datasheet: AS4C2M32S-7BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 3.5 ea
Line Total: USD 7000

Availability - 0
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 2000
Multiples : 2000
2000 : USD 3.0475
4000 : USD 2.944
10000 : USD 2.9095

     
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We proudly offer the AS4C2M32S-7BCNTR DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C2M32S-7BCNTR DRAM.

AS4C2M32S 2M x 32 bit Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Dec. /2012) Features Overview Fast access time: 5.4/5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is Fast Clock rate: 166/143 MHz internally configured as a quad 512K x 32 DRAM Fully synchronous operation with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, Four internal banks (512K x 32bit x 4bank) CLK). Each of the 512K x 32 bit banks is organized Programmable Mode as 2048 rows by 256 columns by 32 bits. Read and - CAS Latency: 2 or 3 write accesses to the SDRAM are burst oriented - Burst Length: 1, 2, 4, 8, or full page accesses start at a selected location and continue for a programmed number of locations in a programmed - Burst Type: Sequential or Interleaved sequence. Accesses begin with the registration of a - Burst-Read-Single-Write BankActivate command which is then followed by a Burst stop function Read or Write command. Individual byte controlled by DQM0-3 The SDRAM provides for programmable Read Auto Refresh and Self Refresh or Write burst lengths of 1, 2, 4, 8, or full page, with a Operating temperature range burst termination option. An auto precharge function - Commercial (0 ~ 70C) may be enabled to provide a self-timed row - Industrial (-40 ~ 85C) precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self Refresh are easy to use. Single +3.3V 0.3V power supply Interface: LVTTL By having a programmable mode register, the system can choose the most suitable modes to 90-ball 8 x 13 x 1.2mm TFBGA package maximize its performance. These devices are well - Pb and Halogen Free suited for applications requiring high memory bandwidth. Table 1. Key Specifications AS4C2M32S -6/7 Clock Cycle time(min.) 6/7 ns tCK3 tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C2M32S-6BIN 166MHz 90-ball TFBGA Industrial -40 ~ 85C AS4C2M32S-7BCN 143MHz 90-ball TFBGA Commercial 0 ~ 70C B: indicates 90-ball (8 x 13 x 1.2mm) TFBGA package N: indicates Pb and Halogen Free Confidential 1 Rev. 3.0 Dec. /2012 AS4C2M32S Figure 1. Ball Assignment (Top View) 1 2 3 7 8 9 DQ26 DQ24 VSS VDD DQ23 DQ21 A DQ28 VDDQ VSSQ VDDQ VSSQ DQ19 B VSSQ DQ27 DQ25 DQ22 DQ20 VDDQ C VSSQ DQ29 DQ30 DQ17 DQ18 VDDQ D VDDQ DQ31 NC NC DQ16 VSSQ E VSS DQM3 A3 A2 DQM2 VDD F A4 A5 A6 A10 A0 A1 G A7 A8 NC NC BA1 NC H CLK CKE A9 BA0 CS RAS J DQM1 NC NC CAS WE DQM0 K VDDQ DQ8 VSS VDD DQ7 VSSQ L VSSQ DQ10 DQ9 DQ6 DQ5 VDDQ M VSSQ DQ12 DQ14 DQ1 DQ3 VDDQ N DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 P DQ13 DQ15 VSS VDD DQ0 DQ2 R Confidential 2 Rev. 3.0 Dec. /2012

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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