AS4C2M32S-7BCNTR Alliance Memory

AS4C2M32S-7BCNTR electronic component of Alliance Memory
AS4C2M32S-7BCNTR Alliance Memory
AS4C2M32S-7BCNTR DRAM
AS4C2M32S-7BCNTR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS4C2M32S-7BCNTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C2M32S-7BCNTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C2M32S-7BCNTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 64Mb, 3.3V, 143Mhz 2M x 32 SDRAM
Datasheet: AS4C2M32S-7BCNTR Datasheet (PDF)
Price (USD)
2000: USD 2.926 ea
Line Total: USD 5852 
Availability : 0
  
QtyUnit Price
2000$ 2.926

Availability 0
Ship by Wed. 19 Nov to Fri. 21 Nov
MOQ : 2000
Multiples : 2000
QtyUnit Price
2000$ 2.926

   
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We are delighted to provide the AS4C2M32S-7BCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C2M32S-7BCNTR and other electronic components in the DRAM category and beyond.

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AS4C2M32S 2M x 32 bit Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 3.0, Dec. /2012) Features Overview Fast access time: 5.4/5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is Fast Clock rate: 166/143 MHz internally configured as a quad 512K x 32 DRAM Fully synchronous operation with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, Four internal banks (512K x 32bit x 4bank) CLK). Each of the 512K x 32 bit banks is organized Programmable Mode as 2048 rows by 256 columns by 32 bits. Read and - CAS Latency: 2 or 3 write accesses to the SDRAM are burst oriented - Burst Length: 1, 2, 4, 8, or full page accesses start at a selected location and continue for a programmed number of locations in a programmed - Burst Type: Sequential or Interleaved sequence. Accesses begin with the registration of a - Burst-Read-Single-Write BankActivate command which is then followed by a Burst stop function Read or Write command. Individual byte controlled by DQM0-3 The SDRAM provides for programmable Read Auto Refresh and Self Refresh or Write burst lengths of 1, 2, 4, 8, or full page, with a Operating temperature range burst termination option. An auto precharge function - Commercial (0 ~ 70C) may be enabled to provide a self-timed row - Industrial (-40 ~ 85C) precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self Refresh are easy to use. Single +3.3V 0.3V power supply Interface: LVTTL By having a programmable mode register, the system can choose the most suitable modes to 90-ball 8 x 13 x 1.2mm TFBGA package maximize its performance. These devices are well - Pb and Halogen Free suited for applications requiring high memory bandwidth. Table 1. Key Specifications AS4C2M32S -6/7 Clock Cycle time(min.) 6/7 ns tCK3 tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time(min.) 42/42 ns tRC Row Cycle time(min.) 60/63 ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C2M32S-6BIN 166MHz 90-ball TFBGA Industrial -40 ~ 85C AS4C2M32S-7BCN 143MHz 90-ball TFBGA Commercial 0 ~ 70C B: indicates 90-ball (8 x 13 x 1.2mm) TFBGA package N: indicates Pb and Halogen Free Confidential 1 Rev. 3.0 Dec. /2012 AS4C2M32S Figure 1. Ball Assignment (Top View) 1 2 3 7 8 9 DQ26 DQ24 VSS VDD DQ23 DQ21 A DQ28 VDDQ VSSQ VDDQ VSSQ DQ19 B VSSQ DQ27 DQ25 DQ22 DQ20 VDDQ C VSSQ DQ29 DQ30 DQ17 DQ18 VDDQ D VDDQ DQ31 NC NC DQ16 VSSQ E VSS DQM3 A3 A2 DQM2 VDD F A4 A5 A6 A10 A0 A1 G A7 A8 NC NC BA1 NC H CLK CKE A9 BA0 CS RAS J DQM1 NC NC CAS WE DQM0 K VDDQ DQ8 VSS VDD DQ7 VSSQ L VSSQ DQ10 DQ9 DQ6 DQ5 VDDQ M VSSQ DQ12 DQ14 DQ1 DQ3 VDDQ N DQ11 VDDQ VSSQ VDDQ VSSQ DQ4 P DQ13 DQ15 VSS VDD DQ0 DQ2 R Confidential 2 Rev. 3.0 Dec. /2012

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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