X-On Electronics has gained recognition as a prominent supplier of AS4C2M32SA-6TINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C2M32SA-6TINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C2M32SA-6TINTR Alliance Memory

AS4C2M32SA-6TINTR electronic component of Alliance Memory
AS4C2M32SA-6TINTR Alliance Memory
AS4C2M32SA-6TINTR DRAM
AS4C2M32SA-6TINTR  Semiconductors

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Part No. AS4C2M32SA-6TINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM SDRAM,64M,3.3V 166MHz,2M x 32
Datasheet: AS4C2M32SA-6TINTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.9375 ea
Line Total: USD 5.94 
Availability - 797
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
797
Ship by Mon. 16 Jun to Wed. 18 Jun
MOQ : 1
Multiples : 1
1 : USD 5.9375
10 : USD 4.741
25 : USD 4.686
100 : USD 4.246
250 : USD 4.246
500 : USD 4.081
1000 : USD 3.927
2000 : USD 3.883
5000 : USD 3.751

   
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We are delighted to provide the AS4C2M32SA-6TINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C2M32SA-6TINTR and other electronic components in the DRAM category and beyond.

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AS4C2M32SA-6TIN AS4C2M32SA-6TCN AS4C2M32SA-7TCN Revision History 64Mb SDRAM AS4C2M32SA - 86pin TSOP II PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet September 2015 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential -1/54- Rev.1.0 Sep. 2015AS4C2M32SA-6TIN AS4C2M32SA-6TCN AS4C2M32SA-7TCN Features Overview Fast access time: 5.4 /5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 67,108,864bits. It is internally Fast Clock rate: 166/143 MHz configured as a quad 512K x 32 DRAM with a synchronous interface (all signals are registered on the Fully synchronous operation positive edge of the clock signal, CLK). Each of the 512K Internal pipelined architecture x 32 bit banks is organized as 2048 rows by 256 columns by 32 bits. Read and write accesses to the SDRAM are Four internal banks (512K x 32bit x 4bank) burst oriented accesses start at a selected location and continue for a programmed number of locations in a Programmable Mode programmed sequence. Accesses begin with the registration of a Bank Activate command which is then - CAS Latency: 2 or 3 followed by a Read or Write command. - Burst Length: 1, 2, 4, 8, or full page The SDRAM provides for programmable Read or Write - Burst Type: Sequential or Interleaved burst lengths of 1, 2, 4, 8, or full page, with a burst - Burst-Read-Single-Write termination option. An auto precharge function may be Burst stop function enabled to provide a self-timed row precharge that is initiated at the end of the burst sequence. The refresh Individual byte controlled by DQM0-3 functions, either Auto or Self Refresh are easy to use. By having a programmable mode register, the system can Auto Refresh and Self Refresh choose the most suitable modes to maximize its performance. These devices are well suited for Operating Temperature: applications requiring high memory bandwidth. - Commercial (0 C~+70 C) - Industrial (-40 C~+85 C) 4096 refresh cycles/64ms Single +3.3V 0.3V power supply Interface: LVTTL Package: - 86-pin 400 x 875 mil plastic TSOP II package (Pb and Halogen Free) Table 1. Ordering Information Product part No Org Temperature Max Clock (MHz) Package AS4C2M32SA-6TIN Industrial -40C to +85C 86-pin TSOP II 2M x 32 166 MHz AS4C2M32SA-6TCN Commercial 0C to +70C 2M x 32 166 MHz 86-pin TSOP II AS4C2M32SA-7TCN Commercial 0C to +70C 2M x 32 143 MHz 86-pin TSOP II Confidential -2/54- Rev.1.0 Sep. 2015

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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