X-On Electronics has gained recognition as a prominent supplier of AS4C32M16D1-5BCNTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C32M16D1-5BCNTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C32M16D1-5BCNTR Alliance Memory

AS4C32M16D1-5BCNTR electronic component of Alliance Memory
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Part No.AS4C32M16D1-5BCNTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 512M 2.5V 200Mhz 32M x 16 DDR1
Datasheet: AS4C32M16D1-5BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 4.4125 ea
Line Total: USD 11031.25

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 27 Jun to Mon. 01 Jul

MOQ : 2500
Multiples : 2500
2500 : USD 3.7375
5000 : USD 3.7375
10000 : USD 3.7375

   
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We are delighted to provide the AS4C32M16D1-5BCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C32M16D1-5BCNTR and other electronic components in the DRAM category and beyond.

AS4C32M16D1 Revision History AS4C32M16D1 - 60-Ball, 8x13x1.2 mm (max) TFBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet August 2014 Confidential 1 Rev. 1.0 Aug. /2014 AS4C32M16D1 32M x 16 bit DDR Synchronous DRAM (SDRAM) TFBGA option - Advanced (Rev. 1.0, Aug. /2014) Features Overview Fast clock rate: 200MHz The AS4C32M16D1 is a high-speed CMOS double data rate synchronous DRAM containing 512 Mbits. It is Differential Clock CK & CK internally configured as a quad 8M x 16 DRAM with a Bi-directional DQS synchronous interface (all signals are registered on the DLL enable/disable by EMRS positive edge of the clock signal, CK). Data outputs Fully synchronous operation occur at both rising edges of CK and . Read and CK Internal pipeline architecture write accesses to the SDRAM are burst oriented Four internal banks, 8M x 16-bit for each bank accesses start at a selected location and continue for a Programmable Mode and Extended Mode registers programmed number of locations in a programmed sequence. Accesses begin with the registration of a - CAS Latency: 2, 2.5, 3 BankActivate command which is then followed by a - Burst length: 2, 4, 8 Read or Write command. The device provides - Burst Type: Sequential & Interleaved programmable Read or Write burst lengths of 2, 4, or 8. Individual bytes write mask control An auto precharge function may be enabled to provide a DM Write Latency = 0 self-timed row precharge that is initiated at the end of Auto Refresh and Self Refresh the burst sequence. The refresh functions, either Auto 8192 refresh cycles / 64ms or Self Refresh are easy to use. In addition, 512Mb DDR Precharge & active power down features programmable DLL option. By having a programmable mode register and extended mode Power supplies: VDD & VDDQ = 2.5V 0.2V register, the system can choose the most suitable Operating temperature range modes to maximize its performance. These devices are - Commercial (0 ~ 70C) well suited for applications requiring high memory band - Industrial (-40 ~ 85C) width result in a device particularly well suited to high Interface: SSTL 2 I/O Interface performance main memory and graphics applications. Package: 60-Ball, 8x13x1.2 mm (max) TFBGA - Pb free and Halogen Free All parts are ROHS compliant Table 1.Ordering Information Part Number Clock Data Rate Package Temperature Temp Range AS4C32M16D1-5BCN 200MHz 400Mbps/pin 60 ball TFBGA Commercial 0 ~ 70C Industrial -40 ~ 85C AS4C32M16D1-5BIN 200MHz 400Mbps/pin 60 ball TFBGA B: indicates TSOP II package C: indicates Commercial temp. I: indicates Industrial temp. N: indicates lead free ROHS Confidential 2 Rev. 1.0 Aug. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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