X-On Electronics has gained recognition as a prominent supplier of AS4C512M16D3L-12BCNTR dram across the USA, India, Europe, Australia, and various other global locations. AS4C512M16D3L-12BCNTR dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C512M16D3L-12BCNTR Alliance Memory

AS4C512M16D3L-12BCNTR electronic component of Alliance Memory
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Part No.AS4C512M16D3L-12BCNTR
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 8GB 1.35V 800MHz 512M x 16 DDR3L CT
Datasheet: AS4C512M16D3L-12BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 34.0018
10 : USD 31.9839
25 : USD 30.1838
50 : USD 29.2258
100 : USD 26.4487
250 : USD 26.2183
2000 : USD 26.2062
N/A

Obsolete
     
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We are delighted to provide the AS4C512M16D3L-12BCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C512M16D3L-12BCNTR and other electronic components in the DRAM category and beyond.

8Gb: x4, x8, x16 DDR3L SDRAM Description Revision History 8Gb: x4, x8, x16 DDR3L SDRAM AS4C2GM4D3L 256 Meg x 4 x 8 banks* AS4C1G8MD3L 128 Meg x 8 x 8 banks AS4C512M16D3L 64 Meg x 16 x 8 banks Revision Details Date Rev 1.0 Preliminary datasheet February 2016 Rev 2.0 Amend Table 1 noted. June 2016 * not released yet Alliance Memory Inc. 551 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice. 0C 8Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM AS4C2GM4D3L 256 Meg x 4 x 8 banks * AS4C1G8MD3L 128 Meg x 8 x 8 banks AS4C512M16D3L 64 Meg x 16 x 8 banks T of 0C to +95C C Features 64ms, 8192-cycle refresh at 0C to +85C V = V = 1.35V (1.2831.45V) DD DDQ 32ms at +85C to +95C Backward compatible to V = V = 1.5V 0.075V DD DDQ Self refresh temperature (SRT) Supports DDR3L devices to be backward com- Automatic self refresh (ASR) patible in 1.5V applications Write leveling Differential bidirectional data strobe Multipurpose register 8n-bit prefetch architecture Output driver calibration Differential clock inputs (CK, CK ) 8 internal banks Options Marking Nominal and dynamic on-die termination (ODT) Configuration for data, strobe, and mask signals 2 Gig x 4 2GM4 Programmable CAS (READ) latency (CL) 1 Gig x 8 1GM 8 Programmable posted CAS additive latency (AL) 512 Meg x 16 512M16 Programmable CAS (WRITE) latency (CWL) FBGA package (Pb-free) x4, x8 Fixed burst length (BL) of 8 and burst chop (BC) of 4 78-ball (9mm x 13.2mm) B (via the mode register set MRS ) FBGA package (Pb-free) x16 Selectable BC4 or BL8 on-the-fly (OTF) 96-ball (9mm x 14mm) B Self refresh mode Timing cycle time 938ps CL = 14 (DDR3-2133) -09 1.07ns CL = 13 (DDR3-1866) -10 1.25ns CL = 11 (DDR3-1600) -12 Operating temperature Commercial (0C T +95C) C Industrial (40C T +95C) I C Key Timing Parameters t t t t Speed Grade Data Rate (MT/s) Target RCD- RP-CL RCD (ns) RP (ns) CL (ns) -12 1600 11-11-11 13.75 13.75 13.75 Table 1:Ordering Information Part Number Clock Frequency Data Rate(MT/s) Power Supply Package AS4C2GM4D3L-12BCN * 800 MHz 1600 1.35V (1.2831.45V) 78-ball (9mm x 13.2mm) FBGA AS4C2GM4D3L-12BIN * 1600 78-ball (9mm x 13.2mm) FBGA 800 MHz 1.35V (1.2831.45V) AS 4C1G8 MD3L-12BCN 800 MHz 1600 1.35V (1.2831.45V) 78-ball (9mm x 13.2mm) FBGA AS 4C1G8 MD3L-12BIN 800 MHz 1600 1.35V (1.2831.45V) 78-ball (9mm x 13.2mm) FBGA 800 MHz AS4C512M16D3L-12BCN 1600 1.35V (1.2831.45V) 96-ball (9mm x 14mm) FBGA 800 MHz AS4C512M16D3L-12BIN 1600 96-ball (9mm x 14mm) FBGA 1.35V (1.2831.45V) Alliance Memory Inc will only offer the -12 1.25ns CL = 11 (DDR3-1600) option Notes: 1. 2.* not released yet Rev 2.0 June 2016 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 1 2015 Alliance Memory, Inc. All rights reserved. TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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