AS4C512M16D3LA-10BAN Alliance Memory

AS4C512M16D3LA-10BAN electronic component of Alliance Memory
AS4C512M16D3LA-10BAN Alliance Memory
AS4C512M16D3LA-10BAN DRAM
AS4C512M16D3LA-10BAN  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of AS4C512M16D3LA-10BAN DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C512M16D3LA-10BAN DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C512M16D3LA-10BAN
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 8G - Dual Die Package DDP 512M x 16 1.35V1.283-1.45V 933MHz DDR3-1866bpspin Automotive-40 C~105 C 96-ball FBGA
Datasheet: AS4C512M16D3LA-10BAN Datasheet (PDF)
Price (USD)
1: USD 35.959 ea
Line Total: USD 35.96 
Availability : 0
  
QtyUnit Price
1$ 35.959
10$ 34.386
25$ 33.187
50$ 32.505
100$ 29.953
180$ 29.557
540$ 29.535

Availability 0
Ship by Tue. 25 Nov to Thu. 27 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 35.959
10$ 34.386
25$ 33.187
50$ 32.505
100$ 29.953
180$ 29.557
540$ 29.535

   
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We are delighted to provide the AS4C512M16D3LA-10BAN from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C512M16D3LA-10BAN and other electronic components in the DRAM category and beyond.

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AS4C512M16D3LA Revision History 8Gbit DDR3L SDRAM 8 BANKS X 64Mbit X 16 - Dual Die Package (DDP) 96ball FBGA Package Revision Details Date Rev 1.0 Preliminary datasheet Feb. 2019 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 41 - Rev.1.0 Feb.2019AS4C512M16D3LA Specifications Features - Density : 8G bits - Double-data-rate architecture two data transfers per clock cycle - Organization : - The high-speed data transfer is realized by the 8 bits prefetch pipe- - 64M words x 16 bits x 8 banks lined architecture - Package : - Bi-directional differential data strobe (DQS and DQS ) is transmitted/ - 96-ball FBGA received with data for capturing data at the receiver - Two 512Mbit x 8 dies stacked (DDP) - DQS is edge-aligned with data for READs center-aligned with data - Lead-free (RoHS compliant) and Halogen-free for WRITEs - Power supply : VDD, VDDQ = 1.35V (1.283V to 1.45V) - Differential clock inputs (CK and CK) - -Backward compatible to VDD, VDDQ =1.5V 0.075V - DLL aligns DQ and DQS transitions with CK transitions - Data rate : 1866Mbps - Commands entered on each positive CK edge data and data mask - 2KB page size referenced to both edges of DQS - Row address: A0 to A15 - Data mask (DM) for write data - Column address: A0 to A9 - Posted CAS by programmable additive latency for better command - Eight internal banks for concurrent operation and data bus efficiency - Burst lengths (BL) : 8 and 4 with Burst Chop (BC) - On-Die Termination (ODT) for better signal quality - Burst type (BT) : - Synchronous ODT - Sequential (8, 4 with BC) - Dynamic ODT - Interleave (8, 4 with BC) - Asynchronous ODT - CAS Latency (CL) : 5, 6, 7, 8, 9, 10, 11, 13 - Multi Purpose Register (MPR) for pre-defined pattern read out - CAS Write Latency (CWL) : 5, 6, 7, 8 ,9 - ZQ calibration for DQ drive and ODT - Precharge : auto precharge option for each burst access - RESET pin for Power-up sequence and reset function - Driver strength : RZQ/7, RZQ/6 (RZQ = 240 ) - SRT range : Normal/extended - Refresh : auto-refresh, self-refresh - Programmable Output driver impedance control - Refresh cycles : - Average refresh period 7.8 s at -40C Tc +85C 3.9 s at +85C < Tc +105C - Operating case temperature range - Comercial Tc = 0C to +95C - Industrial Tc = -40C to +95C - Automotive Tc = -40C to +105C Table 1. Ordering Information Org Temperature Max Clock (MHz) Product part No Package 933 AS4C512M16D3LA-10BCN 512M x 16 96-ball FBGA Commercial 0C to 95C 933 512M x 16 Industrial -40C to 95C 96-ball FBGA AS4C512M16D3LA-10BIN 933 AS4C512M16D3LA-10BAN 96-ball FBGA Automotive -40C to 105C 512M x 16 Table 2. Speed Grade Information CAS Latency tRCD(ns) Speed Grade tRP(ns) Clock Frequency DDR3-1866 933 MHz 13 13.91 13.91 Confidential - 2 of 41 - Rev.1.0 Feb.2019

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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