AS4C64M8SC-7TINTR Alliance Memory

AS4C64M8SC-7TINTR electronic component of Alliance Memory
AS4C64M8SC-7TINTR Alliance Memory
AS4C64M8SC-7TINTR DRAM
AS4C64M8SC-7TINTR  Semiconductors
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X-On Electronics has gained recognition as a prominent supplier of AS4C64M8SC-7TINTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C64M8SC-7TINTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

Part No. AS4C64M8SC-7TINTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM 512Mb 64Mx8 3.3V 143MHz SDRAM I-Temp
Datasheet: AS4C64M8SC-7TINTR Datasheet (PDF)
Price (USD)
1000: USD 12.793 ea
Line Total: USD 12793 
Availability : 0
  
QtyUnit Price
1000$ 12.793

Availability 0
Ship by Tue. 21 Oct to Thu. 23 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 12.793

   
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We are delighted to provide the AS4C64M8SC-7TINTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C64M8SC-7TINTR and other electronic components in the DRAM category and beyond.

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AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN Revision History 512M SDRAM 54/86pin TSOP II Package Revision Details Date Rev 1.0 Preliminary datasheet Sep. 2018 Alliance Memory Inc. 511 Taylor Way, San Carlos, CA 94070 TEL: (650) 610-6800 FAX: (650) 620-9211 Alliance Memory Inc. reserves the right to change products or specification without notice Confidential - 1 of 24 - Rev.1.0 Sep. 2018AS4C16M32SC-7TIN AS4C32M16SC-7TIN AS4C64M8SC-7TIN 1 Overview This chapter gives an overview of the 512-Mbit Synchronous DRAM component product and describes its main characteristics. 1.1 Features Fully Synchronous to Positive Clock Edge Fast clock rate: 133 MHz Multiple Burst Read with Single Write Operation Four Banks controlled by BA0 & BA1 Data Mask for Byte Control (x16,x32) Programmable Mode registers - CAS Latency: 1 or 2 or 3 - Burst Length: 1, 2, 4, 8, or full page - Burst Type: Sequential or Interleaved Automatic and Controlled Precharge Command Auto Refresh and Self Refresh 8192 refresh cycles/64ms(7.8 s) T 85C Power down mode Data Mask for Read / Write control (x8, x16, x32) Random Column Address every CLK (1-N Rule) Single +3.3V0.3V power supply Operating Temperature Range: - Industrial: T = -40~85C A Interface: LVTTL Available in 86/54 Pin 400 mil plastic TSOP II package,TSOPII54 (x8, x16) TSOPII86 (x32) - Pb free and Halogen free Table 1. Key Specifications Speed Code -7 Unit System Frequency (fCK) 133 MHz t Max. Clock Frequency CL3 7.5 ns CK3 t 5.4 ns AC3 t CL2 10 ns CK2 t 6 ns AC2 t CL1 20 ns CK1 t 17 ns AC1 Table 2. Ordering Information Package Temperature Temp Range Frequency Part Number AS4C16M32SC-7TIN 133MHz Industrial -40C to 85C 86 Pin TSOP II AS4C32M16SC-7TIN 133MHz 54 Pin TSOP II Industrial -40C to 85C AS4C64M8SC-7TIN 133MHz 54 Pin TSOP II Industrial -40C to 85C Confidential - 2 of 24 - Rev.1.0 Sep. 2018

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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