X-On Electronics has gained recognition as a prominent supplier of AS4C8M16D1-5BCNTR dram across the USA, India, Europe, Australia, and various other global locations. AS4C8M16D1-5BCNTR dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C8M16D1-5BCNTR

AS4C8M16D1-5BCNTR electronic component of Alliance Memory
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Part No.AS4C8M16D1-5BCNTR
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM 128M, 2.5V, 200Mhz 8M x 16 DDR1
Datasheet: AS4C8M16D1-5BCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 3.525 ea
Line Total: USD 8812.5

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 4.048
10 : USD 3.7145
100 : USD 3.3005
250 : USD 3.3005
500 : USD 3.197
1000 : USD 3.0935
2500 : USD 3.0475
5000 : USD 2.944
10000 : USD 2.9095

     
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We proudly offer the AS4C8M16D1-5BCNTR DRAM at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the AS4C8M16D1-5BCNTR DRAM.

128M DDR1 -AS4C8M16D1 Revision History AS4 D - -ball FBGA PACKAGE Revision Details Date Rev 1.0 Preliminary datasheet D 201 O O L D Q F H 0 H P R U , Q F 7 D O R U : D 6 D Q & D U O R V & 7 ( / ) O O L D Q F H 0 H P R U , Q F U H V H U Y H V W K H U L J K W W R F K D Q J H S U R G X F W V R U V S H F L I L F D W L R Q Z L W K R X W Q R W L F H &RQILGHQWLDO 5HY 0D 128M DDR1 -AS4C8M16D1 )HDWXUHV Fast clock rate: 250/200MHz Operating temperature: - Commercial (0C~70 C) - Industrial (-40C~85 C) Differential Clock CK & input CK Bi-directional DQS DLL enable/disable by EMRS Fully synchronous operation Internal pipeline architecture Four internal banks, 2M x 16-bit for each bank Programmable Mode and Extended Mode registers - CAS Latency: 2, 2.5, 3 - Burst length: 2, 4, 8 - Burst Type: Sequential & Interleaved Individual byte write mask control DM Write Latency = 0 Auto Refresh and Self Refresh 4096 refresh cycles / 64ms Precharge & active power down Power supplies: VDD & VDDQ = 2.5V 0.2V Interface: SSTL 2 I/O Interface Package: 60-Ball, 8x13x1.2 mm (max) FBGA - Pb free and Halogen free &RQILGHQWLDO 5HY 0D

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ACM
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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