X-On Electronics has gained recognition as a prominent supplier of AS4C8M16SA-6BANTR dram across the USA, India, Europe, Australia, and various other global locations. AS4C8M16SA-6BANTR dram are a product manufactured by Alliance Memory. We provide cost-effective solutions for dram, ensuring timely deliveries around the world.

AS4C8M16SA-6BANTR Alliance Memory

AS4C8M16SA-6BANTR electronic component of Alliance Memory
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Part No.AS4C8M16SA-6BANTR
Manufacturer: Alliance Memory
Category:DRAM
Description: DRAM
Datasheet: AS4C8M16SA-6BANTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 4.775 ea
Line Total: USD 11937.5

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 21 Jun to Tue. 25 Jun

MOQ : 1
Multiples : 1
1 : USD 5.5315
10 : USD 5.106
100 : USD 4.6
250 : USD 4.577
500 : USD 4.3585
1000 : USD 4.1745
2500 : USD 4.0365
10000 : USD 4.0365

   
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We are delighted to provide the AS4C8M16SA-6BANTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C8M16SA-6BANTR and other electronic components in the DRAM category and beyond.

AS4C4M16SA-Automotive 64M (4M x 16 bit) Synchronous DRAM (SDRAM) Confidential Advanced (Rev. 1.0- 63nm, Mar. /2014) Features Overview Fast access time from clock: 5.4 ns The 64Mb SDRAM is a high-speed CMOS synchronous DRAM containing 64 Mbits. It is internally Fast clock rate: 166 MHz configured as 4 Banks of 1M word x 16 DRAM with a Fully synchronous operation synchronous interface (all signals are registered on AEC-Q100 Compliant the positive edge of the clock signal, CLK). Read and Internal pipelined architecture write accesses to the SDRAM are burst oriented 1M word x 16-bit x 4-bank accesses start at a selected location and continue for Programmable Mode registers a programmed number of locations in a programmed - CAS Latency: 2 or 3 sequence. Accesses begin with the registration of a Bank Activate command which is then followed by a - Burst Length: 1, 2, 4, 8, or full page Read or Write command. - Burst Type: Sequential or Interleaved The SDRAM provides for programmable Read or - Burst stop function Write burst lengths of 1, 2, 4, 8, or full page, with a - Optional drive strength control burst termination option. An auto precharge function Auto Refresh and Self Refresh may be enabled to provide a self-timed row precharge 4096 refresh cycles/32ms that is initiated at the end of the burst sequence. The Automotive Ambient Temperature: -40~105C refresh functions, either Auto or Self Refresh are easy CKE power down mode to use. By having a programmable mode register, the system can choose the most suitable modes to Single +3.3V 0.3V power supply maximize its performance. These devices are well Interface: LVTTL suited for applications requiring high memory 54-pin 400 mil plastic TSOP II package bandwidth and particularly well suited to high 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package performance PC applications. - All parts ROHS Compliant Table 1. Key Specifications AS4C4M16SA -6 tCK3 Clock Cycle time(min.) 6 ns tAC3 Access time from CLK (max.) 5.4 ns tRAS Row Active time(min.) 42ns tRC Row Cycle time(min.) 60ns Table 2.Ordering Information Part Number Frequency Package Temperature Temp Range AS4C4M16SA-6BAN 166MHz 54-Ball FBGA Industrial -40 ~ 105C AS4C4M16SA-6TAN 166MHz 54-Pin TSOPII Industrial -40 ~ 105C B: indicates FBGA package T: indicates TSOP II package N: indicates Pb and Halogen Free Confidential 1 Rev. 1.0-63nm Mar. /2014 AS4C4M16SA - Automotive Figure 1. Pin Assignment (Top View) VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 VSSQ 6 49 VDDQ DQ3 7 48 DQ12 DQ4 8 47 DQ11 9 46 VDDQ VSSQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 VSSQ 12 43 VDDQ DQ7 13 42 DQ8 VDD 14 41 VSS 15 40 LDQM NC/RFU WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 NC BA0 20 35 A11 21 34 BA1 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 27 28 VDD VSS Figure 1.1 Ball Assignment (Top View) 1 2 3 7 8 9 VSS DQ15 VSSQ VDDQ DQ0 VDD A DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 B DQ12 DQ11 VSSQ VDDQ DQ4 DQ3 C DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 D DQ8 NC VSS VDD LDQM DQ7 E UDQM CLK CKE CAS RAS WE F NC A11 A9 BA0 BA1 CS G A 8 A7 A6 A 0 A1 A10 H VSS A5 A4 A3 A2 VDD J Confidential 2 Rev. 1.0-63nm Mar. /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI

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