X-On Electronics has gained recognition as a prominent supplier of AS4C8M16SA-6TCNTR DRAM across the USA, India, Europe, Australia, and various other global locations. AS4C8M16SA-6TCNTR DRAM are a product manufactured by Alliance Memory. We provide cost-effective solutions for DRAM, ensuring timely deliveries around the world.

AS4C8M16SA-6TCNTR Alliance Memory

AS4C8M16SA-6TCNTR electronic component of Alliance Memory
AS4C8M16SA-6TCNTR Alliance Memory
AS4C8M16SA-6TCNTR DRAM
AS4C8M16SA-6TCNTR  Semiconductors

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See Product Specifications
Part No. AS4C8M16SA-6TCNTR
Manufacturer: Alliance Memory
Category: DRAM
Description: DRAM
Datasheet: AS4C8M16SA-6TCNTR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 3.8875 ea
Line Total: USD 3.89 
Availability - 1417
Ship by Thu. 10 Jul to Mon. 14 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1417
Ship by Thu. 10 Jul to Mon. 14 Jul
MOQ : 1
Multiples : 1
1 : USD 3.8875
10 : USD 3.243
25 : USD 3.069
100 : USD 2.783
250 : USD 2.772
500 : USD 2.673
1000 : USD 2.585
2000 : USD 2.409
5000 : USD 2.387

   
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Memory Size
Maximum Clock Frequency
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We are delighted to provide the AS4C8M16SA-6TCNTR from our DRAM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AS4C8M16SA-6TCNTR and other electronic components in the DRAM category and beyond.

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AS4C8M16SA 128M - 8M x 16 bit Synchronous DRAM (SDRAM) Confidential (Rev. 2.2, March 2014) Features Overview Fast access time from clock: 5/5.4 ns The 128Mb SDRAM is a high-speed CMOS synchronous DRAM containing 128 Mbits. It is Fast clock rate: 166/143 MHz internally configured as 4 Banks of 2M word x 16 Fully synchronous operation DRAM with a synchronous interface (all signals are Internal pipelined architecture registered on the positive edge of the clock signal, 2M word x 16-bit x 4-bank CLK). Read and write accesses to the SDRAM are Programmable Mode registers burst oriented accesses start at a selected location - CAS Latency: 2, or 3 and continue for a programmed number of locations - Burst Length: 1, 2, 4, 8, or full page in a programmed sequence. Accesses begin with the registration of a BankActivate command which - Burst Type: Sequential or Interleaved is then followed by a Read or Write command. - Burst stop function Operating temperature range The SDRAM provides for programmable Read - Commercial (0 ~ 70C) or Write burst lengths of 1, 2, 4, 8, or full page, with a burst termination option. An auto precharge - Industrial (-40 ~ 85C) function may be enabled to provide a self-timed row Auto Refresh and Self Refresh precharge that is initiated at the end of the burst 4096 refresh cycles/64ms sequence. The refresh functions, either Auto or Self CKE power down mode Refresh are easy to use. Single +3.3V 0.3V power supply By having a programmable mode register, the Interface: LVTTL system can choose the most suitable modes to 54-pin 400 mil plastic TSOP II package maximize its performance. These devices are well 54-ball 8.0 x 8.0 x 1.2mm (max) FBGA package suited for applications requiring high memory All parts ROHS Compliant bandwidth and particularly well suited to high performance PC applications. Table 1. Key Specifications AS4C16M16S -6/7 tCK3 Clock Cycle time (min.) 6/7 ns tAC3 Access time from CLK (max.) 5.4/5.4 ns tRAS Row Active time (min.) 42/42 ns tRC Row Cycle time (min.) 60/63 ns Table 2. Ordering Information Part Number Frequency Package AS4C8M16SA-7TCN 143 MHz 54 pin TSOP II AS4C8M16SA-6TCN 166 MHz 54 pin TSOP II AS4C8M16SA-6TIN 166 MHz 54 pin TSOP II AS4C8M16SA-6BIN 166 MHz 54 ball TFBGA AS4C8M16SA-7BCN 143 MHz 54 ball TFBGA T : indicates TSOP II package B : indicates TFBGA package N : indicates Pb free and Halogen free ROHS compliant parts C: Commercial I: Industrial Confidential 1 Rev. 2.2 Mar /2014 AS4C8M16SA Figure 1. Pin Assignment (Top View) VDD 1 54 VSS DQ0 2 53 DQ15 VDDQ 3 52 VSSQ DQ1 4 51 DQ14 DQ2 5 50 DQ13 VSSQ 6 49 VDDQ DQ3 7 48 DQ12 DQ4 8 47 DQ11 VDDQ 9 46 VSSQ DQ5 10 45 DQ10 DQ6 11 44 DQ9 VSSQ 12 43 VDDQ DQ7 13 42 DQ8 VDD 14 41 VSS LDQM 15 40 NC/RFU WE 16 39 UDQM CAS 17 38 CLK RAS 18 37 CKE CS 19 36 NC BA0 20 35 A11 BA1 21 34 A9 A10/AP 22 33 A8 A0 23 32 A7 A1 24 31 A6 A2 25 30 A5 A3 26 29 A4 VDD 27 28 VSS Figure 1.1 Ball Assignment (Top View) 1 2 3 7 8 9 VSS DQ15 VSSQ VDDQ DQ0 VDD A DQ14 DQ13 VDDQ VSSQ DQ2 DQ1 B D Q12 DQ11 VSSQ VD DQ DQ4 DQ3 C DQ10 DQ9 VDDQ VSSQ DQ6 DQ5 D DQ8 NC VSS VDD LDQM DQ7 E UDQM CLK CKE CAS RAS WE F NC A11 A9 BA0 BA1 CS G A 8 A7 A6 A 0 A1 A10 H VSS A5 A4 A3 A2 VDD J Confidential 2 Rev. 2.2 Mar /2014

Tariff Desc

8542.32.00 -- Memories
               Monolithic integrated circuits:
ALLIANCE MEMORY, INC.
ALLIANCE SEMI
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