Product Information

CDNBS08-T36C

CDNBS08-T36C electronic component of Bourns

Datasheet
ESD Suppressors / TVS Diodes TVS Diode Array 36VOLT

Manufacturer: Bourns
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 1.1264 ea
Line Total: USD 11264

0 - Global Stock
MOQ: 10000  Multiples: 10000
Pack Size: 10000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 10000
Multiples : 10000
10000 : USD 1.3016

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
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Features Applications RoHS compliant* Audio/video inputs Protects four lines RS-232, RS-422 and RS-423 data lines Unidirectional and bidirectional Portable electronics con gurations Medical sensors ESD protection: 30 kV max. CDNBS08-T03~T36C - TVS Diode Array Series General Information The markets of portable communications, computing and video equipment are 8765 challenging the semiconductor industry to develop increasingly smaller electronic components. Bourns offers Steering Diode/Transient Voltage Suppressor Array diodes for surge and ESD protection applications in an eight lead narrow body SOIC package size format. TheTransient Voltage Suppressor Array series offer a choice of voltage types ranging from 3 V to 36 V in unidirectional and bidirectional con gurations. Bourns Chip Diodes conform to JEDEC standards, are easy to handle on standard pick and place 1234 equipment and their at con guration minimizes roll away. 8765 The Bourns device will meet IEC 61000-4-2 (ESD), IEC 61000-4-4 (EFT) and IEC 61000-4-5 (Surge) requirements. Thermal Characteristics ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Max. Unit Operating Temperature T -55 to +150 C J 1234 Storage Temperature T -55 to +150 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A CDNBS08- Parameter Symbol Unit Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- Uni- Bi- T03 T03C T05 T05C T08 T08C T12 T12C T15 T15C T24 T24C T36 T36C Min. Breakdown Voltage 1 mA V 3.3 6.0 8.5 13.3 16.7 26.7 40.0 V BR Working Peak Voltage V 3.0 5.0 8.0 12.0 15.0 24.0 36.0 V WM Max. Clamping Voltage V 8.0 9.8 13.4 19.0 24.0 43.0 51.0 V 1 C V I = 1 A C P Typ. Clamping Voltage 10.9 V 13.5 V 16.9 V 25.9 V 30.0 V 49.0 V 76.8 V V V 1 C 8/20 s V I 43 A 42 A 34 A 21 A 17 A 12 A 9 A C PP Max. Leakage Current V I 125 20 10 1 1 1 1 A WM D Max. Cap. Bidirectional 0 V, C 450 308 300 105 80 50 45 pF J(SD) 1 MHz ESD Protection per IEC 61000-4-2 Contact - Min. 8 Contact - Max. 30 ESD kV Air - Min. 15 Air - Max. 30 2 Peak Pulse Power (t = 8/20 s) P 500 W p PP Forward Voltage 100 mA, V 1.5 V 3 F 300 s - Square Wave Notes: 1. See Pulse Wave Form. 2. See Peak Pulse Power vs. Pulse Time. 3. Only applies to unidirectional devices. 4. Part numbers with a C suf x are bidirectional devices, i.e. CDNBS08-T03C. *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. Speci cations are subject to change without notice. Customers should verify actual device performance in their speci c applications. *RoHS COMPLIANT CDNBS08-T03~T36C - TVS Diode Array Series Product Dimensions Recommended Footprint This is an RoHS compliant molded JEDEC narrow body SO-8 AB package with 100 % Sn plating on the lead frame. It weighs approximately 15 mg and has a ammability rating of UL 94V-0. A J G D C 45 NOM. B C 4 4 E H I 7 NOM. 4 PLCS. D Dimensions 1.143 - 1.397 MILLIMETERS A DIMENSIONS = (0.045 - 0.065) (INCHES) 7 NOM. 3 PLCS. 0.635 - 0.889 B (0.025 - 0.035) 6.223 C Min. (0.245) Min. E 3.937 - 4.191 D (0.155 - 0.165) F 1.016 - 1.27 K E (0.040 - 0.050) L Dimensions Typical Part Marking 4.80 - 5.00 A (0.189 - 0.197) CDNBS08-T03....................SDL CDNBS08-T12C ................ SDD CDNBS08-T03C ............... SDM CDNBS08-T15...................SDE 3.81 - 4.00 B (0.150 - 0.157) CDNBS08-T05................... SDA CDNBS08-T15C ................ SDF CDNBS08-T05C ................ SDB CDNBS08-T24...................SDG 5.80 - 6.20 C CDNBS08-T08....................SDJ CDNBS08-T24C ................ SDH (0.228 0.244) CDNBS08-T08C ................ SDK CDNBS08-T36...................SDN 0.36 - 0.51 D CDNBS08-T12...................SDC CDNBS08-T36C ................ SDP (0.014 - 0.020) 1.35 - 1.75 E (0.053 - 0.069) How to Order 0.102 - 0.203 F (0.004 - 0.008) CD NBS08 - T 03 C 0.25 - 0.50 G Common Code (0.010 - 0.020) Chip Diode 0.51 - 1.12 H Package (0.020 - 0.044) NBS08 = Narrow Body SOIC8 Package 0.190 - 0.229 I Model (0.0075 - 0.0090) T = Transient Voltage Suppressor 4.60 - 5.21 Working Peak Voltage J (0.181 - 0.205) 03 = 3 V (Volts) RWM 0.28 - 0.79 Suf x K (0.011 - 0.031) C = Bidirectional Diode 1.27 L (0.050) Speci cations are subject to change without notice. Customers should verify actual device performance in their speci c applications.

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
BOURNS
Bourns Inc.
BOURNS JW MILLER
BR4
J.W. Miller
JW Miller

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