Product Information

SM8SF36CA-Q

SM8SF36CA-Q electronic component of Bourns

Datasheet
ESD Suppressors / TVS Diodes AEC-Q101

Manufacturer: Bourns
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.8859 ea
Line Total: USD 2.89

2748 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2724 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SM8SF36CA-Q
Bourns

1 : USD 2.8859
10 : USD 2.4513
100 : USD 2.0165
250 : USD 1.9924
500 : USD 1.8717
750 : USD 1.5094
2250 : USD 1.4973
4500 : USD 1.4732

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Subcategory
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SM8S 33CA 809 Features Applications n Maximum Peak Power Dissipation: n High peak power applications (up to rated 7000 watts limits) n Meets ISO7637-2 / ISO16750-2 Surge n High temperature applications (up to rated specification (varies by test condition) limits) n RoHS compliant* n Clamping diode n AEC-Q101 compliant** n Load switching and lighting SM8SF-Q Transient Voltage Suppressor Diode Series General Information The Model SM8SF-Q Series TVS diodes are designed to provide overvoltage protection for sensitive electronics, meeting ISO7637-2 and ISO16750-2 requirements (varies by test condition). The Model SM8SF-Q Series offers a choice of Working Peak Reverse Voltages from 24 V to 36 V and Breakdown Voltage up to 40 V. The SM8SF-Q is available in a compact DFN package of 8.1 mm x 10.5 mm, with a low profile of just 1.3 mm, facilitating layout in today s compact PCB designs. Absolute Maximum Ratings ( T = 25 C Unless Otherwise Noted) A Parameter Symbol Value Unit Maximum Peak Pulse Power Dissipation (10/1000 s) P 7000 W PK Power Dissipation with Infinite Heatsink (T = 25 C) P 5 W c D Operating Temperature Range T -55 to +175 C J Storage Temperature Range T -55 to +175 C STG Electrical Characteristics ( T = 25 C Unless Otherwise Noted) A Working Maximum Maximum Maximum Breakdown Voltage Peak Reverse Reverse Reverse Unidirectional Device Bidirectional Device V (Volts) Reverse Leakage Voltage Surge BR Voltage V I Current RWM RSM I T Part No. Marking Part No. Marking Min. Max. V (V) I (A) V (V) I (A) RWM R RSM RSM (mA) SM8SF24A-Q 24A SM8SF24CA-Q 24CA 26.7 29.5 5 24 10 38.9 180 SM8SF28A-Q 28A SM8SF28CA-Q 28CA 31.1 34.4 5 28 10 45.4 154 SM8SF30A-Q 30A SM8SF30CA-Q 30CA 33.3 36.8 5 30 10 48.4 145 SM8SF33A-Q 33A SM8SF33CA-Q 33CA 36.7 40.6 5 33 10 53.3 131 SM8SF36A-Q 36A SM8SF36CA-Q 36CA 40.0 44.2 5 36 10 58.1 120 Asia-Pacific: Tel: +886-2 2562-4117 Email: asiacus bourns.com EMEA: Tel: +36 88 885 877 Email: eurocus bourns.com The Americas: Tel: +1-951 781-5500 Email: americus bourns.com www.bourns.com WARNING Cancer and Reproductive Harm - www.P65Warnings.ca.gov *RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011. **Q part number suffix for automotive and other applications requiring appropriate AEC-Q101 compliance. Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/legal/disclaimer.pdf.SM8SF-Q Transient Voltage Suppressor Diode Series Performance Graphs Load Dump Power Characteristics Peak Pulse Power Derating Curve 6000 10000 5000 5000 4000 3000 2000 1000 0 1000 25 50 75 100 125 150 175 1 10 100 Case Temperature, T (C) c Pulse Width (ms) ISO 7637-2: Pulse 5a, Single Pulse: SM8SF-24A-Q ISO 7637-2: Pulse 5a, Single Pulse: SM8SF-33A-Q 0 0.0 1 0.5 t = 40 ms d 2 1.0 3 1.5 t = 100 ms d 4 2.0 2.5 5 t = 200 ms d 3.0 6 t = 200 ms d 7 3.5 t = 400 ms d 4.0 8 79 81 83 85 87 89 91 93 95 97 99 100 150 155 160 165 170 175 180 185 190 195 200 U (Volts) U (Volts) s s Power Dissipation 8 6 4 2 Specifications are subject to change without notice. Users should verify actual device performance in their specific applications. The products described herein and this document are subject to specific legal 0 disclaimers as set forth on the last page of this document, and at www.bourns.com/docs/ 25 50 75 100 125 150 175 legal/disclaimer.pdf. Case Temperature, T (C) c Load Dump Power (W) R (Ohms) i Power Dissipation (W) Reverse Surge Power (W) R (Ohms) i

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
BOURNS
Bourns Inc.
BOURNS JW MILLER
BR4
J.W. Miller
JW Miller

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