Product Information

ATF-54143-TR1G

ATF-54143-TR1G electronic component of Broadcom

Datasheet
RF JFET Transistors Transistor GaAs Single Voltage

Manufacturer: Broadcom
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 3000
Multiples : 1

Stock Image

ATF-54143-TR1G
Broadcom

3000 : USD 2.1996
3000 : USD 2.1996
3000 : USD 2.1996
3000 : USD 2.1996
3000 : USD 2.1996
3000 : USD 2.1996
N/A

Obsolete
0 - WHS 2

MOQ : 3000
Multiples : 3000

Stock Image

ATF-54143-TR1G
Broadcom

3000 : USD 2.4677
6000 : USD 2.3371
18000 : USD 2.2066
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

ATF-54143-TR1G
Broadcom

1 : USD 2.8653
30 : USD 2.7403
150 : USD 2.6151
750 : USD 2.49
N/A

Obsolete
0 - WHS 4

MOQ : 1
Multiples : 1

Stock Image

ATF-54143-TR1G
Broadcom

1 : USD 3.666
10 : USD 3.1185
100 : USD 2.6958
250 : USD 2.5572
500 : USD 2.3077
1000 : USD 2.2055
3000 : USD 2.2055
6000 : USD 2.1814
9000 : USD 2.0489
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Configuration
Product
Type
Brand
Continuous Drain Current
Forward Transconductance - Min
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Nf - Noise Figure
P1db - Compression Point
Product Type
Subcategory
Taric
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ATF-54143 Low Noise Enhancement Mode Pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Description Features High linearity performance Avago Technologies ATF-54143 is a high dynamic range, low noise, E-PHEMT housed in a 4-lead SC-70 (SOT-343) 1 Enhancement Mode Technology surface mount plastic package. Low noise fi gure The combination of high gain, high linearity and low Excellent uniformity in product specifi cations noise makes the ATF-54143 ideal for cellular/PCS base 800 micron gate width stations, MMDS, and other systems in the 450 MHz to 6 Low cost surface mount small plastic package SOT- GHz frequency range. 343 (4 lead SC-70) Tape-and-Reel packaging option available Surface Mount Package SOT-343 Lead-free option available. Specifi cations 2 GHz 3V, 60 mA (Typ.) rd 36.2 dBm output 3 order intercept 20.4 dBm output power at 1 dB gain compression Pin Connections and Package Marking 0.5 dB noise fi gure DRAIN 16.6 dB associated gain SOURCE Applications SOURCE GATE Low noise amplifi er for cellular/PCS base stations LNA for WLAN, WLL/RLL and MMDS applications Note: General purpose discrete E -PHEMT for other ultra low Top View. Package marking provides orientation and identifi cation noise applications 4F = Device Code Note: x = Date code character 1. Enhancement mode technology requires positive Vgs, thereby identifi es month of manufacture. eliminating the need for the negative gate voltage associated with conventional depletion mode devices. Attention: Observe precautions for handling electrostatic sensitive devices. ESD Machine Model (Class A) ESD Human Body Model (Class 1A) Refer to Avago Application Note A004R: Electrostatic Discharge Damage and Control. 4Fx 1 ATF-54143 Absolute Maximum Ratings Absolute Symbol Parameter Units Maximum 2 V Drain - Source Voltage V 5 DS 2 Gate - Source Voltage V -5 to 1 V GS 2 V Gate Drain Voltage V -5 to 1 GD 2 Drain Current mA 120 I DS 3 P Total Power Dissipation mW 725 diss 5 (ON mode) RF Input Power (Vds=3V, Ids=60mA) dBm 20 P in max. P (OFF mode) RF Input Power (Vd=0, Ids=0A) dBm 20 in max. 5 Gate Source Current mA 2 I GS Channel Temperature C 150 T CH Storage Temperature C -65 to 150 T STG 4 Thermal Resistance C/W 162 jc Notes: 120 0.7V 1. Operation of this device in excess of any one of these parameters may cause permanent damage. 100 2. Assumes DC quiescent conditions. 0.6V 3. Source lead temperature is 25C. Derate 6.2 mW/C for T > 33C. L 80 4. Thermal resistance measured using 150C Liquid Crystal Measure- ment method. 60 0.5V 5. The device can handle +20 dBm RF Input Power provided I is GS 40 limited to 2 mA. I at P drive level is bias circuit dependent. GS 1dB See application section for additional information. 20 0.4V 0.3V 0 02143756 V (V) DS Figure 1. Typical I-V Curves. (V = 0.1 V per step) GS 6, 7 Product Consistency Distribution Charts 160 200 160 Cpk = 0.77 Cpk = 1.35 Cpk = 1.67 Stdev = 1.41 Stdev = 0.4 Stdev = 0.073 160 120 120 120 -3 Std +3 Std -3 Std +3 Std 80 80 80 40 40 40 0 0 0 30 32 34 36 38 40 42 14 15 16 17 18 19 0.25 0.45 0.65 0.85 1.05 GAIN (dB) OIP3 (dBm) NF (dB) Figure 3. Gain 2 GHz, 3 V, 60 mA. Figure 2. OIP3 2 GHz, 3 V, 60 mA. Figure 4. NF 2 GHz, 3 V, 60 mA. USL = 18.5, LSL = 15, Nominal = 16.6 LSL = 33.0, Nominal = 36.575 USL = 0.9, Nominal = 0.49 Notes: 6. Distribution data sample size is 450 samples taken from 9 diff erent wafers. Future wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade-off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de-embedded from actual measurements. 2 I (mA) DS

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
 AVAGO TECHNOLOGIES
AV4
AV9
Avago
AVAGO TECHNOLOGIES
Avago Technologies US Inc.
AVAGO(Broadcom)
Broadcom Avago
BROADCOM (AVAGO)
Broadcom / Avago
BROADCOM CORPORATION
Broadcom Limited
PLX Technology Avago
PLX Technology / Avago

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