Product Information

2SC4536-T1-AZ

2SC4536-T1-AZ electronic component of CEL

Datasheet
RF Bipolar Transistors NPN Med Pwr Hi-Freq

Manufacturer: CEL
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Availability Price Quantity
0 - Global Stock


Multiples : 1000
N/A

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Packaging
Height
Length
Width
Brand
Factory Pack Quantity :
LoadingGif

Notes:- Show Stocked Products With Similar Attributes.
Image Description
PS2703-1-F3-A electronic component of CEL PS2703-1-F3-A

Transistor Output Optocouplers Hi-Iso Photo 1-Ch
Stock : 1

PS7801C-1A-A electronic component of CEL PS7801C-1A-A

Solid State Relays - PCB Mount 4pin SOP 1CH FormA 10 CxR SSR LWer Capa
Stock : 0

PS2703-1-K-A electronic component of CEL PS2703-1-K-A

Transistor Output Optocouplers Hi-Iso Photo 1-Ch
Stock : 1

PS2815-1-F3-A electronic component of CEL PS2815-1-F3-A

CEL Transistor Output Optocouplers Hi CTR AC Input 1-Ch
Stock : 1

PS2915-1-F3-AX electronic component of CEL PS2915-1-F3-AX

Transistor Output Optocouplers Hi CTR AC Input 1-Ch
Stock : 1

PS8802-2-F3-AX electronic component of CEL PS8802-2-F3-AX

Optoisolator Transistor Output 2500Vrms 2 Channel 8-SSOP
Stock : 1

ZICM35XSPX-PF-1 electronic component of CEL ZICM35XSPX-PF-1

Zigbee / 802.15.4 Modules MeshConnect EM35x Mini Modules (ZICM35xSPx) Programming Fixture
Stock : 0

ZMW-SENSOR-1 electronic component of CEL ZMW-SENSOR-1

Multiple Function Sensor Modules MeshWorks Open Tether Sensor node
Stock : 1

B1010SP0-EVB-1 electronic component of CEL B1010SP0-EVB-1

MeshConnect™ B1010SP0 Transceiver; Bluetooth® Smart 4.x Low Energy (BLE) 2.4GHz Evaluation Board
Stock : 0

PS2805A-1-A electronic component of CEL PS2805A-1-A

Transistor Output Optocouplers Hi-Iso AC Input 1-Ch
Stock : 0

Image Description
MRF315A electronic component of Advanced Semiconductor MRF315A

Transistors RF Bipolar RF Transistor
Stock : 7

MS1001 electronic component of Advanced Semiconductor MS1001

Transistors RF Bipolar RF Transistor
Stock : 4

BFP620H7764XTSA1 electronic component of Infineon BFP620H7764XTSA1

RF Bipolar Transistors RF BIP TRANSISTOR
Stock : 6000

SD1275-01 electronic component of Advanced Semiconductor SD1275-01

Transistors RF Bipolar RF Transistor
Stock : 0

2N6439 electronic component of Advanced Semiconductor 2N6439

Transistors RF Bipolar RF Transistor
Stock : 0

MAPRST0912-350 electronic component of MACOM MAPRST0912-350

Transistors RF Bipolar 960-1215MHz 350W Gain: 9.4dB min
Stock : 3

BLX15 electronic component of Advanced Semiconductor BLX15

Transistors RF Bipolar RF Transistor
Stock : 0

MRF422 electronic component of MACOM MRF422

RF Bipolar Transistors 2-30MHz 150Watts 28Volt Gain 10dB
Stock : 468

NSVF3007SG3T1G electronic component of ON Semiconductor NSVF3007SG3T1G

RF Bipolar Transistors RF-TR 12V 30MA FT=8G NPN
Stock : 5849

MRF317 electronic component of MACOM MRF317

RF Bipolar Transistors
Stock : 5

NE46100 / NE46134 NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46134 FEATURES TYPICAL OUTPUT POWER vs. INPUT POWER HIGH DYNAMIC RANGE f = 1.0 GHz, IC = 100 mA LOW IM DISTORTION: -40 dBc 30.0 12.5 V HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 10 V LOW NOISE: 1.5 dB TYP at 500 MHz 26.0 5 V LOW COST 24.0 22.0 20.0 DESCRIPTION 18.0 16.0 The NE461 series of NPN silicon epitaxial bipolar transis- tors is designed for medium power applications requiring high 14.0 dynamic range. This device exhibits an outstanding combina- 12.0 tion of high gain and low intermodulation distortion, as well as 5 10 15 20 25 low noise figure. The NE461 series offers excellent perfor- Input Power, PIN (dBm) mance and reliability at low cost through titanium, platinum, gold metallization system and direct nitride passiva- tion of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form. ELECTRICAL CHARACTERISTICS (TA = 25 C) PART NUMBER NE46100 NE46134 1 EIAJ REGISTERED NUMBER 2SC4536 PACKAGE OUTLINE 00 (CHIP) 34 SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 10 V, IC = 100 mA GHz 5.5 5.5 3 NFMIN Minimum Noise Figure at VCE = 10 V, IC = 50 mA, 500 MHz dB 1.5 1.5 VCE = 10 V, IC = 50 mA, 1 GHz dB 2.0 2.0 GL Linear Gain, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dB 9.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dB 8.0 2 S21E Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz dB 10.0 5.5 7.0 2 hFE DC Current Gain at VCE = 10 V, IC = 50 mA 40 200 40 200 ICBO Collector Cutoff Current at VCB = 20 V, IE = 0 mA . A 5.0 5.0 IEBO Emitter Cutoff Current at VEB = 2 V, IC = 0 mA A 5.0 5.0 P1dB Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz dBm 27.0 VCE = 12.5 V, IC = 100 mA, 1.0 GHz dBm 27.5 IM3 Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz, Total POUT = 20 dBm dBc -40.0 -40.0 RTH (J-C) Thermal Resistance (Junction to Case) C/W 30 32.5 RTH (J-A) Thermal Resistance (Junction to Ambient) C/W 312.5 Notes: 1. Electronic Industrial Association of Japan. 2. Pulsed: PW 350 ms, Duty Cycle 2% 3. RS = RL = 50 untuned DISCONTINUED Output Power, POUT (dBm)NE46100, NE46134 1 ABSOLUTE MAXIMUM RATINGS (TA = 25C) NE46134 SYMBOLS PARAMETERS UNITS RATINGS TYPICAL NOISE PARAMETERS (TA = 25C) VCBO Collector to Base Voltage V 30 FREQ. NFOPT GA OPT VCEO Collector to Emitter Voltage V 15 (GHz) (dB) (dB) MAG ANG RN/50 VCC = 10 V, IC = 50 mA VEBO Emitter to Base Voltage V 3 0.5 1.5 13.5 0.34 -176 0.09 IC Collector Current mA 250 PT Total Power Dissipation 2 NE46100 W 3.75 3 NE46134 W 2.0 TJ Junction Temperature NE46100 C 200 NE46134 C 150 TSTG Storage Temperature NE46100 C -65 to +200 NE46134 C -65 to +150 Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Chip mounted on an infinite heat sink (see AN-1001 for handling instructions). 2 3. Packaged device mounted on 0.7 mm x 2.5 cm double sided ceramic substrate (copper plating). TYPICAL PERFORMANCE CURVES (TA=25C) NE46134 NE46100, NE46134 INSERTION POWER GAIN AND MAXIMUM TOTAL POWER DISSIPATION AVAILABLE GAIN vs. COLLECTOR CURRENT vs. AMBIENT TEMPERATURE VCE = 10 V, f = 1 GHz 4.0 NE46100 10 3.75 MAG RTH (J-C) 30C/W WITH INFINITE 8 HEAT SINK 3.0 NE46134 RTH (J-C) 32.5C/W 2 S21E WITH INFINITE 6 HEAT SINK 2.0 4 NE46134 RTH (J-A) 1.0 312.5C/W WITH INFINITE 2 HEAT SINK 0.4 0 0 0 50 100 150 200 0 50 100 300 85 87.5 Collector Current, Ic (mA) Ambient Temperature, TA (C) NE46100, NE46134 NE46100, NE46134 COLLLECTOR CURRENT vs. NOISE FIGURE vs. COLLECTOR CURRENT COLLECTOR TO EMITTER VOLTAGE CE = 10 V, f = 1 GHz V 5 IB = 0.6 mA 0.5 mA 100 0.4 mA 4 80 0.3 mA 3 60 0.2 mA 2 40 0.1 mA 1 20 0 0 0 10 20 5 10 100 200 Collector to Emitter Voltage, VCE (V) Collector Current, IC (mA) RS = RL = 50 Untuned DISCONTINUED 2 Insertion Power Gain, S21E (dB) Maximum Available Gain, MAG (dB) Collector Current, IC (mA) Noise Figure,NF(dB) Total Power Dissipation, PT (W)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
California Eastern Laboratories
CALIFORNIA MICRO DEV

Looking for help? Visit our FAQ's Section to answer to all your questions

 

X-ON Worldwide Electronics

Welcome To X-ON ELECTRONICS
For over three decades, we have been advocating and shaping the electronic components industry. Our management complements our worldwide business scope and focus. We are committed to innovation, backed by a strong business foundation. If you need a trustworthy supplier of electronic components for your business – look no further.
 

Copyright ©2024  X-ON Electronic Services. All rights reserved.
Please ensure you have read and understood our Terms & Conditions before purchasing.
All prices exclude GST.

Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted Image for all the cards that are accepted