DATA SHEET NPN SILICON RF TRANSISTOR JEITA Part No. NE68518 / 2SC5015 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18) FEATURES High fT: fT = 12 GHz TYP. VCE = 3 V, IC = 10 mA, f = 2 GHz Low noise and high gain Low voltage operation 4-pin super minimold (18) package ORDERING INFORMATION Part Number Quantity Supplying Form NE68518-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC5015-A Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape NE68518-T1-A 3 kpcs/reel 2SC5015-T1-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 9 V Collector to Emitter Voltage VCEO 6 V Emitter to Base Voltage VEBO 2 V Collector Current IC 30 mA Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Document No. PU10403EJ01V0DS (1st edition) The mark shows major revised points. (Previous No. P10394EJ2V0DS00) Date Published June 2003 CP(K) DISCONTINUEDNE68518 / 2SC5015 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 0.1 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 0.1 A Note 1 DC Current Gain hFE VCE = 3 V, IC = 10 mA 75 150 RF Characteristics Gain Bandwidth Product fT VCE = 3 V, IC = 10 mA, f = 2 GHz 12 GHz 2 Insertion Power Gain S21e VCE = 3 V, IC = 10 mA, f = 2 GHz 9 11 dB Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 1.5 2.5 dB Note 2 Reverse Transfer Capacitance Cre VCB = 3 V, IE = 0 mA, f = 1 MHz 0.3 0.5 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank KB Marking T83 hFE Value 75 to 150 2 Data Sheet PU10403EJ01V0DS DISCONTINUED