NE85618-T1-A CEL

NE85618-T1-A electronic component of CEL
NE85618-T1-A CEL
NE85618-T1-A RF Bipolar Transistors
NE85618-T1-A  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of NE85618-T1-A RF Bipolar Transistors across the USA, India, Europe, Australia, and various other global locations. NE85618-T1-A RF Bipolar Transistors are a product manufactured by CEL. We provide cost-effective solutions for RF Bipolar Transistors, ensuring timely deliveries around the world.

Part No. NE85618-T1-A
Manufacturer: CEL
Category: RF Bipolar Transistors
Description: RF Bipolar Transistors NPN High Frequency
Datasheet: NE85618-T1-A Datasheet (PDF)
Price (USD)
3000: USD 0.4633 ea
Line Total: USD 1389.9 
Availability : 0
  
QtyUnit Price
3000$ 0.4633

Availability 0
Ship by Thu. 30 Oct to Wed. 05 Nov
MOQ : 3000
Multiples : 3000
QtyUnit Price
3000$ 0.4633

   
Manufacturer
Product Category
Transistor Type
Technology
Transistor Polarity
Continuous Collector Current
Pd - Power Dissipation
Mounting Style
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Rohs Mouser
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We are delighted to provide the NE85618-T1-A from our RF Bipolar Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NE85618-T1-A and other electronic components in the RF Bipolar Transistors category and beyond.

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NPN SILICON RF TRANSISTOR JEITA Part No. NE85618 / 2SC5011 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD FEATURES High Gain Bandwidth Product (fT = 6.5 GHz TYP.) Low Noise, High Gain Low Voltage Operation 4-pin super mini mold Package ORDERING INFORMATION Part Number Quantity Supplying Form NE85618-A 50 pcs (Non reel) 8 mm wide embossed taping 2SC501 1-A Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape NE85618-T1-A 3 kpcs/reel 2SC5011-T 1-A Remark To order evaluation samples, contact your nearby sales office. The unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 20 V Collector to Emitter Voltage VCEO 12 V Emitter to Base Voltage VEBO 3 V Collector Current IC 100 mA Note Total Power Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C Note Free air Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10515EJ01V0DS (1st edition) The mark shows major revised points. (Previous No. P10399EJ2V0DS00) Date Published August 2004 CP(K) DISCONTINUEDNE85618 / 2SC5011 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 10 V, IE = 0 mA 1.0 A Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 1.0 A Note 1 DC Current Gain hFE VCE = 10 V, IC = 20 mA 50 120 250 RF Characteristics Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA 6.5 GHz 2 Insertion Power Gain S21e VCE = 10 V, IC = 20 mA, f = 1.0 GHz 11 13 dB Noise Figure NF VCE = 10 V, IC = 7 mA, f = 1.0 GHz 1.1 2.0 dB Note 2 Reverse Transfer Capacitance Cre VCB = 10 V, IE = 0 mA, f = 1.0 MHz 0.5 0.9 pF Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded hFE CLASSIFICATION Rank EB FB GB Marking R26 R27 R28 hFE Value 50 to 100 80 to 160 125 to 250 2 Data Sheet PU10515EJ01V0DS DISCONTINUED

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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