Product Information

2N4856A

2N4856A electronic component of Central Semiconductor

Datasheet
Central Semiconductor JFET Leaded JFET

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 2.2567 ea
Line Total: USD 4513.4

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 2000
Multiples : 2000

Stock Image

2N4856A
Central Semiconductor

2000 : USD 2.304

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Maximum Drain Gate Voltage
Factory Pack Quantity :
Type
Cnhts
Hts Code
Mxhts
Taric
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2N4856 2N4856A www.centralsemi.com N-CHANNEL DESCRIPTION: SILICON JFET The CENTRAL SEMICONDUCTOR 2N4856 and 2N4856A are N-Channel silicon JFETs designed for analog switching and chopper applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 40 V DS Drain-Gate Voltage V 40 V DG Reverse Gate-Source Voltage V 40 V GSR Forward Gate Current I 50 mA GF Power Dissipation (T=25C) P 360 mW A D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN MAX UNITS I V =20V, V=0 0.25 nA GSS GS DS I V =20V, V =0, T=150C 0.5 A GSS GS DS A I V =15V, V=0 50 mA DSS DS GS I V =15V, V=10V 0.25 nA D(OFF) DS GS I V =15V, V =10V, T=150C 0.5 A D(OFF) DS GS A BV I =1.0A, V=0 40 V GSS G DS V V =15V, I=0.5nA 4.0 10 V GS(OFF) DS D V I =20mA, V=0 0.75 V DS(ON) D GS r V =0, I =0, f=1.0kHz 25 DS(ON) GS D C V =10V, V =0, f=1.0MHz (2N4856) 8.0 pF rss GS DS C V =10V, V =0, f=1.0MHz (2N4856A) 4.0 pF rss GS DS C V =10V, V =0, f=1.0MHz (2N4856) 18 pF iss GS DS C V =10V, V =0, f=1.0MHz (2N4856A) 10 pF iss GS DS t V =10V, V =10V, I =20mA (2N4856) 6.0 ns d DD GS(OFF) D t V =10V, V =10V, I =20mA (2N4856A) 5.0 ns d DD GS(OFF) D t V =10V, V =10V, I=20mA 3.0 ns r DD GS(OFF) D t V =10V, V =10V, I =20mA (2N4856) 25 ns off DD GS(OFF) D t V =10V, V =10V, I =20mA (2N4856A) 20 ns off DD GS(OFF) D R0 (11-June 2012)2N4856 2N4856A N-CHANNEL SILICON JFET TO-18 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Source 2) Drain 3) Gate MARKING: FULL PART NUMBER R0 (11-June 2012) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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Central Semi
CENTRAL SEMICONDUCTOR
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Central Semiconductor Corp.

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