2N5320 Central Semiconductor

2N5320 electronic component of Central Semiconductor
2N5320 Central Semiconductor
2N5320 Bipolar Transistors - BJT
2N5320  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5320 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5320 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No.2N5320
Manufacturer:Central Semiconductor
Category:Bipolar Transistors - BJT
Description:Transistors Bipolar - BJT NPN Ampl/Switch
Datasheet:2N5320 Datasheet (PDF)
Shipping Charges:Click here for details
AI Image
Price (USD)
  
1: USD 4.5125 ea
Line Total: USD 4.51 
Availability : 3520
  
Ship by Tue. 23 Jun to Thu. 25 Jun
QtyUnit Price
1$ 4.5125
10$ 2.7485
100$ 1.98
500$ 1.661
1000$ 1.551
5000$ 1.507
  

Availability3520
Ship by Tue. 23 Jun to Thu. 25 Jun
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 4.5125
10$ 2.7485
100$ 1.98
500$ 1.661
1000$ 1.551
5000$ 1.507

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the 2N5320 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5320 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5320 2N5321 NPN 2N5322 2N5323 PNP www.centralsemi.com COMPLEMENTARY SILICON DESCRIPTION: SWITCHING TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5320, 2N5322 series types are complementary silicon power transistors manufactured by the epitaxial planar process, designed for amplifier and switching applications. MARKING: FULL PART NUMBER TO-39 CASE 2N5320 2N5321 MAXIMUM RATINGS: (T =25C) SYMBOL 2N5322 2N5323 UNITS C Collector-Base Voltage V 100 75 V CBO Collector-Emitter Voltage V 100 75 V CEV Collector-Emitter Voltage V 75 50 V CEO Emitter-Base Voltage V 6.0 5.0 V EBO Continuous Collector Current I 2.0 A C Continuous Base Current I 1.0 A B Power Dissipation P 10 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 175 C/W JA Thermal Resistance 17.5 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) C 2N5320 2N5321 2N5322 2N5323 SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=80V - 0.5 - - A CBO CB I V=60V - - - 5.0 A CBO CB I V=5.0V - 0.1 - - A EBO EB I V=4.0V - - - 0.5 A EBO EB BV I =100A, V=1.5V 100 - 75 - V CEV C BE BV I=10mA 75 - 50 - V CEO C BV I=100A 6.0 - 5.0 - V EBO E V I =500mA, I =50mA (2N5320) - 0.5 - - V CE(SAT) C B V I =500mA, I =50mA (2N5321) - - - 0.8 V CE(SAT) C B V I =500mA, I =50mA (2N5322) - 0.7 - - V CE(SAT) C B V I =500mA, I =50mA (2N5323) - - - 1.2 V CE(SAT) C B V V =4.0V, I=500mA - 1.1 - 1.4 V BE(ON) CE C h V =4.0V, I=500mA 30 175 40 250 FE CE C h V =2.0V, I=1.0A 10 - - - FE CE C f V =4.0V, I=50mA, f=10MHz 50 - 50 - MHz T CE C R5 (11-May 2017)2N5320 2N5321 NPN 2N5322 2N5323 PNP COMPLEMENTARY SILICON SWITCHING TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) C SYMBOL TEST CONDITIONS MAX UNITS t V =30V, I =500mA, I =50mA (2N5320, 2N5321) 80 ns on CC C B1 t V =30V, I =500mA, I =50mA (2N5322, 2N5323) 100 ns on CC C B1 t V =30V, I =500mA, I =I =50mA (2N5320, 2N5321) 800 ns off CC C B1 B2 t V =30V, I =500mA, I =I =50mA (2N5322, 2N5323) 1.0 s off CC C B1 B2 TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R5 (11-May 2017) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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