2N5416 Central Semiconductor

2N5416 electronic component of Central Semiconductor
2N5416 Central Semiconductor
2N5416 Bipolar Transistors - BJT
2N5416  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of 2N5416 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. 2N5416 Bipolar Transistors - BJT are a product manufactured by Central Semiconductor. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. 2N5416
Manufacturer: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP High Voltage
Datasheet: 2N5416 Datasheet (PDF)
Price (USD)
1: USD 3.8 ea
Line Total: USD 3.8 
Availability : 1342
  
Ship by Mon. 17 Nov to Wed. 19 Nov
QtyUnit Price
1$ 3.8
10$ 2.668
100$ 2.211
500$ 1.771

Availability 1342
Ship by Mon. 17 Nov to Wed. 19 Nov
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 3.8
10$ 2.668
100$ 2.211
500$ 1.771

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the 2N5416 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N5416 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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2N5415 2N5416 www.centralsemi.com SILICON DESCRIPTION: PNP TRANSISTORS The CENTRAL SEMICONDUCTOR 2N5415 and 2N5416 are silicon PNP transistors designed for consumer and industrial line-operated applications. MARKING: FULL PART NUMBER TO-39 CASE MAXIMUM RATINGS: (T =25C) SYMBOL 2N5415 2N5416 UNITS A Collector-Base Voltage V 200 350 V CBO Collector-Emitter Voltage V 200 300 V CEO Emitter-Base Voltage V 4.0 6.0 V EBO Continuous Collector Current I 1.0 A C Continuous Base Current I 0.5 A B Power Dissipation P 1.0 W D Operating and Storage Junction Temperature T , T -65 to +200 C J stg ELECTRICAL CHARACTERISTICS: (T =25C) 2N5415 2N5416 A SYMBOL TEST CONDITIONS MIN MAX MIN MAX UNITS I V=175V - 50 - - A CBO CB I V=280V - - - 50 A CBO CB I V =200V, V=1.5V - 50 - - A CEV CE EB I V =300V, V=1.5V - - - 50 A CEV CE EB I V=150V - 50 - - A CEO CE I V=250V - - - 50 A CEO CE I V=4.0V - 20 - - A EBO EB I V=6.0V - - - 20 A EBO EB BV I=50mA 200 - 300 - V CEO C BV I =50mA, R=50 - - 350 - V CER C BE V I =50mA, I=5.0mA - 2.5 - 2.0 V CE(SAT) C B V I =50mA, I=5.0mA - 1.5 - 1.5 V BE(SAT) C B h V =10V, I=50mA 30 150 30 120 FE CE C h V =10V, I =5.0mA, f=1.0kHz 25 - 25 - fe CE C f V =10V, I =10mA, f=5.0MHz 15 - 15 - MHz T CE C C V =10V, I =0, f=1.0MHz - 25 - 25 pF ob CB E R2 (16-December 2013)2N5415 2N5416 SILICON PNP TRANSISTORS TO-39 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector MARKING: FULL PART NUMBER R2 (16-December 2013) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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CENTRAL SEMICONDUCTOR
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