Product Information

BFY90

BFY90 electronic component of Central Semiconductor

Datasheet
RF Bipolar Transistors . .

Manufacturer: Central Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 9.5634 ea
Line Total: USD 9.56

910 - Global Stock
Ships to you between
Thu. 09 May to Mon. 13 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
848 - Global Stock


Ships to you between Thu. 09 May to Mon. 13 May

MOQ : 1
Multiples : 1

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BFY90
Central Semiconductor

1 : USD 4.876
10 : USD 4.301
100 : USD 3.9905
2000 : USD 3.979

     
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BFX89 BFY90 www.centralsemi.com SILICON DESCRIPTION: NPN RF TRANSISTORS The CENTRAL SEMICONDUCTOR BFX89 and BFY90 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER TO-72 CASE MAXIMUM RATINGS: (T =25C unless otherwise noted) A SYMBOL UNITS Collector-Base Voltage V 30 V CBO Collector-Emitter Voltage V 30 V CER Collector-Emitter Voltage V 15 V CEO Emitter-Base Voltage V 2.5 V EBO Continuous Collector Current I 25 mA C Peak Collector Current (f>1.0MHz) I 50 mA CM Power Dissipation P 200 mW D Power Dissipation (T=25C) P 300 mW C D Operating and Storage Junction Temperature T , T -65 to +200 C J stg Thermal Resistance 875 C/W JA Thermal Resistance 583 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS I V =15V - - 10 - - 10 nA CBO CB BV I=10A 30 - - 30 - - V CBO C BV I =1.0mA, R =50 30 - - 30 - - V CER C BE BV I=1.0mA 15 - - 15 - - V CEO C BV I=10A 2.5 - - 2.5 - - V EBO E h V =1.0V, I=2.0mA 20 - 150 25 - 150 FE CE C h V =1.0V, I=25mA 20 - 125 20 - 125 FE CE C f V =5.0V, I=2.0mA, f=500MHz - 1.0 - 1.0 1.1 - GHz T CE C f V =5.0V, I=25mA, f=500MHz - 1.2 - 1.3 1.4 - GHz T CE C C V =10V, I=0, f=1.0MHz - - 1.7 - - 1.5 pF ob CB E C V =5.0V, I=2.0mA, f=1.0MHz - 0.6 - - 0.6 0.8 pF re CE C G V =10V, I =8.0mA, f=200MHz - 19 22 - - - dB pe CE C G V =10V, I=8.0mA, f=800MHz - - 7.0 - - - dB pe CE C G V =10V, I=14mA, f=200MHz - - - 21 23 - dB pe CE C G V =10V, I=14mA, f=800MHz - - - - 8.0 - dB pe CE C R4 (13-March 2014)BFX89 BFY90 SILICON NPN RF TRANSISTORS ELECTRICAL CHARACTERISTICS - Continued: (T =25C unless otherwise noted) A BFX89 BFY90 SYMBOL TEST CONDITIONS MIN TYP MAX MIN TYP MAX UNITS NF V =5.0V, I =2.0mA, f=100kHz - - - - - 4.0 dB CE C NF V =5.0V, I =2.0mA, f=200MHz - 3.3 4.0 - 2.5 3.5 dB CE C NF V =5.0V, I =2.0mA, f=500MHz, R=50 - - 6.5 - - 5.0 dB CE C G NF V =5.0V, I =2.0mA, f=800MHz - 7.0 - - 5.5 - dB CE C P V =10V, I =8.0mA, f=205MHz - 6.0 - - - - mW o CE C P V =10V, I =14mA, f=205MHz - - - 10 12 - mW o CE C TO-72 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Emitter 2) Base 3) Collector 4) Case MARKING: FULL PART NUMBER R4 (13-March 2014) www.centralsemi.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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