JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SOD-323 BAP50-03 GENERAL PURPOSE PIN DIODE FEATURES y Low diode capacitance y Low diode forward resistance MARKING: A81 Maximum Ratings and Electrical Characteristics, Single Diode Ta=25 Parameter Symbol Limit Unit Continuous Reverse V oltage V 50 V R Continuous Forward Current I 50 mA F Power Dissipation (Ta=90) Pd 200 mW Thermal Resistance Junction to R 85 JA /W Ambient Junction Temperature T 150 j Storage Temperature T -55~+150 STG Electrical Ratings Ta=25 Parameter Symbol Min Typ Max Unit Conditions Continuous reverse voltage V 50 V I =10A R R 1.1 V I =50mA Forward voltage V F F I 100 nA V =50V Reverse current R R C 0.91 pF V =0V,f=1MHz d1A R C 1.11 pF V =0V,f=1MHz d1B R Diode capacitance C 0.55 pF V =1V,f=1MHz d2 R C 0.35 pF V =5V,f=1MHz d3 R r 40 I =0.5mA , f=100MHz note1 D F Diode forward resistance r 25 I =1mA , f=100MHz note1 D F r 5 I =10mA , f=100MHz note1 D F Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. A,Apr,2011 ATypical Characteristics BAP50-03 Reverse Characteristics Forward Characteristics 0.1 50 Ta=100 10 0.01 Ta=25 1 1E-3 0.5 0.6 0.7 0.8 0.9 1.0 10 50 100 FORWARD VOLTAGE V (V) REVERSE VOLTAGE V (V) F R Capacitance Characteristics Power Derating Curve 1.0 250 Ta=25 f=1MHz 0.8 200 0.6 150 0.4 100 0.2 50 0.0 0 0 5 10 15 20 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T ( ) REVERSE VOLTAGE V (V) a R A,Apr,2011 Ta=100 Ta=25 CAPACITANCE BETWEEN TERMINALS FORWARD CURRENT I (mA) F C (pF) T POWER DISSIPATION P (mW) REVERSE CURRENT I (uA) D R