General Purpose Transistor SS8050-G (NPN) RoHS Device Diagram: Collector SOT-23 3 1 : BASE 2 : EMITTER 0.118(3.00) 1 0.110(2.80) 3 : COLLECTOR Base 3 0.055(1.40) 2 0.047(1.20) Emitter 1 2 0.079(2.00) 0.071(1.80) 0.006(0.15) 0.003(0.08) Maximum Ratings (at TA=25C unless otherwise noted) 0.041(1.05) 0.100(2.55) 0.035(0.90) 0.089(2.25) Parameter Symbol Value Unit Collector-Base voltage VCBO 40 V 0.004(0.10) max Collector-Emitter voltage VCEO 25 V 0.020(0.50) 0.020(0.50) 0.012(0.30) Emitter-Base voltage VEBO 5 V 0.012(0.30) Collector current IC 1.5 A Collector power dissipation PC 300 mW Dimensions in inches and (millimeter) Thermal resistance from R JA 417 C/W junction to ambient Junction temperature TJ 150 C Storage temperature Tstg -55~+150 C Electrical Characteristics (at TA=25C unless otherwise noted) Symbol Typ Parameter Conditions Min Max Unit Collector-Base breakdown voltage IC =100 A , IE=0 V(BR)CBO 40 - - V Collector-Emitter breakdown voltage IC =0.1mA , IB=0 V(BR)CEO 25 - - V Emitter-Base breakdown voltage IE =100 A , IC=0 V(BR)EBO 5 - - V VCB=40V , IE=0 A Collector cut-off current ICBO - - 0.1 VCE=20V , IE=0 A Collector cut-off current ICEO - - 0.1 VEB=5V , IC=0 A Emitter cut-off current IEBO - - 0.1 VCE=1V , IC=100mA hFE(1) 200 - 350 DC current gain VCE=1V , IC=800mA hFE(2) 40 - - Collector-Emitter saturation voltage IC=800mA , IB=80mA VCE(sat) - - 0.5 V Base-Emitter saturation voltage IC=800mA , IB=80mA VBE(sat) - - 1.2 V Transition frequency VCE=10V, IC=50mA, f=30MHz fT 100 - - MHZ Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR56 Page 1 Comchip Technology CO., LTD.General Purpose Transistor RATING AND CHARACTERISTIC CURVES (SS8050-G) Fig.1 - Static Characteristic Fig.2 - hFE IC 140 1000 COMMON COMMON EMITTER 500A EMITTER Ta=25C VCE=1V 120 450A Ta=100C 400A 100 350A Ta=25C 80 300A 100 250A 60 200A 40 150A 100A 20 IB=50 A 0 10 100 10001500 1 10 0 0.5 1.0 1.5 2.0 2.5 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat IC Fig.4 - VBEsat IC 1000 1.2 1.0 100 Ta=100C Ta= 25C 0.8 Ta= 25C 0.6 Ta=100C 10 0.4 = 10 = 10 1 0.2 1 10 100 10001500 1 10 100 10001500 Collector Current, Ic (mA) Collector Current, Ic (mA) Fig.5 - VBE IC Fig.6 - Cob/Cib VCB/VEB 1500 200 1000 f=1MHZ IE=0/IC=0 100 Ta=25C Cib Ta=100C 100 Cob 10 Ta= 25C 10 COMMON EMITTER VCE=1V 1 1 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 10 20 Reverse Voltge, (V) Base - Emitter Voltage, VBE (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A QW-BTR56 Page 2 Comchip Technology CO., LTD. Collector-Emitter Saturation Collector Current, Ic (mA) Voltage, VCEsat (mV) Base-Emitter Saturation Voltage, VBEsat (V) Collector Current, IC (mA) Capacitance, C (pF) DC Current Gain, hFE