BAV70DW SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT-363 Small Surface Mount Package Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Leakage Current Moisture Sensitivity: Level 1 per J-STD-020D Two BAV70 Circuits in One Package Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 Halogen and Antimony Free.Gree Device (Note 3) Orientation: See Diagram Weight: 0.006 grams (Approximate) C A A 2 2 1 A A C 1 1 2 TOP VIEW TOP VIEW SOT-363 Internal Schematic Ordering Information (Note 4) Part Number Case Packaging BAV70DW-7-F SOT-363 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAV70DW Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage 100 V V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage V 80 V RWM DC Blocking Voltage V R RMS Reverse Voltage 57 V V R(RMS) Forward Continuous Current (Note 5) 300 mA I FM Average Rectified Output Current (Note 5) 150 mA I O Repetitive Peak Forward Current I 450 mA FRM Non-repetitive Peak Forward Surge Current t = 1.0s 4 t = 1.0ms 1 A I FSM t = 1.0s 0.5 Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 5) 625 C/W R JA Thermal Resistance, Junction to Solder Point 70 C/W R JSP Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Max Unit Test Condition 75 I = 2.5A F Reverse Breakdown Voltage (Note 6) V V (BR)R 80 I = 20A F I = 1.0mA F 0.715 0.855 I = 10mA F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F V = 75V R 2.5 A 50 A V = 75V, T = +150C R J Reverse Current (Note 6) I R 30 A V = 25V, T = +150C R J 25 nA V = 20V R Total Capacitance C 1.5 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time t 4.0 ns rr I = 0.1 x I , R = 100 rr R L Forward Recovery Voltage V 1.75 V I = 10mA, t = 20 ns FR F r Notes: 5. Device mounted on FR-4 PCB, 1in. x 0.85in. x 0.062in. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at