BAV99BRVA-7

BAV99BRV/VA SURFACE MOUNT SWITCHING DIODE ARRAY Features Mechanical Data Fast Switching Speed Case: SOT563 Low Forward Voltage: Maximum of 0.715V at 1mA Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Reverse Recovery: Maximum of 4ns Moisture Sensitivity: Level 1 per J-STD-020 Low Capacitance: Maximum of 1.5pF Terminals: Matte Tin Finish annealed over Copper Alloy Ultra-Small Surface Mount Package leadframe (Lead Free Plating). Solderable per MIL-STD-202, Thermally Efficient Copper Alloy leadframe for High Power Method 208 Dissipation Polarity: See Diagram Two BAV99 Circuits In One Package Weight: 0.003 grams (approximate) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Notes 2 & 3) AC AC C A C A 2 2 2 2 1 1 SOT563 AC AC C A A C 1 1 1 1 2 2 Top View Bottom View BAV99BRV BAV99BRVA Ordering Information (Note 4) Part Number Case Packaging BAV99BRV-7 SOT563 3000/Tape & Reel BAV99BRVA-7 SOT563 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See BAV99BRV/VA Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Non-Repetitive Peak Reverse Voltage V 100 V RM V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 75 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 53 V R(RMS) Forward Continuous Current (Note 5) I 215 mA FM Non-Repetitive Peak Forward Surge Current t = 1.0s 4.0 t = 1.0ms I 1.0 A FSM 0.5 t = 1.0s Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 350 mW D Thermal Resistance Junction to Ambient Air (Note 5) 357 R C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition Reverse Breakdown Voltage (Note 6) V 75 V I = 100A (BR)R R I = 1.0mA 0.715 F I = 10mA 0.855 F Forward Voltage V V F 1.0 I = 50mA F 1.25 I = 150mA F V = 75V A R 2.5 50 A V = 75V, T = 150C R J Reverse Current (Note 6) I R 30 A V = 25V, T = 150C R J 25 nA V = 20V R Total Capacitance C 1.5 pF V = 0, f = 1.0MHz T R I = I = 10mA, F R Reverse Recovery Time 4.0 ns t rr I = 0.1 x I , R = 100 rr R L Notes: 5. Device mounted on FR-4 PCB, on minimum recommended, 2oz copper pad layout. 6. Short duration pulse test used to minimize self-heating effect. 2 of 4 April 2012 BAV99BRV(A) Diodes Incorporated www.diodes.com Document number: DS35312 Rev. 5 - 2 NEW PRODUCT