D3V3F8U9LP3810 8 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features Clamping Voltage: 5V at 16A TLP V I C BR (Min) PP (Max) I/O (Typ) IEC 61000-4-2 (ESD): Air 12kV, Contact 12kV 5.5V 5 0.55pF IEC 61000-4-5 (Lightning): 5A (8/20s) 8 Channels of ESD Protection Description Ultra-Low Channel Input Capacitance of 0.55pF Typical The D3V3F8U9LP3810 is a high-performance device suitable for TLP Dynamic Resistance: 0.25 protecting four high speed I/Os. These devices are assembled in U- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) DFN3810-9 (Type B) package and have high ESD surge capability, Halogen and Antimony Free. Green Device (Note 3) low ESD clamping voltage and ultra-low capacitance. Mechanical Data Applications Case: U-DFN3810-9 (Type B) Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial Moisture Sensitivity: Level 1 per J-STD-020 ATA, Display port. Terminal Connections: See Schematic Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.005 grams (Approximate) U-DFN3810-9 (Type B) Pin5 Pin6 Pin7 Pin8 Pin9 Pin1 Pin2 Pin4 3 Device Schematic Pin Description (Top View) Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity D3V3F8U9LP3810-7 Standard MW5 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D3V3F8U9LP3810 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 I 5 A I/O to V , 8/20s PP SS 32 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 12 kV I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 12 kV VESD AIR I/O to VSS Operating Temperature -55 to +85 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) 360 C/W R JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V V I =1mA, I/O to V RWM R SS Reverse Current 1.0 A I V = 3.3V, I/O to V R R SS Reverse Breakdown Voltage 5.5 7.0 V V I = 1mA, I/O to V BR R SS Forward Clamping Voltage -1.0 -0.85 V V I = -15mA, I/O to V F F SS Holding Reverse Voltage 1.19 V V I/O to V HOLD SS Holding Reverse Current 90 mA I I/O to V HOLD SS Clamping Voltage (Note 6) 5 V VC TLP, 16A, tp = 100ns, I/O to VSS Clamping Voltage (Note 6) V 5 V TLP, -16A, tp = 100ns, I/O to V C SS Dynamic Reverse Resistance 0.25 R TLP, 10A, tp = 100ns, I/O to V DIF-R SS Dynamic Forward Resistance 0.2 R TLP, 10A, tp = 100ns, V to I/O DIF-F SS Channel Input Capacitance 0.55 pF C V = 0V, V = 0V, f = 1MHz I/O I/O SS 55 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at