D3V3Q1B2DLP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V I C BR min PP max IN typ Provides ESD Protection per IEC 61000-4-2 Standard: 3.8V 4A 6pF Air 16kV, Contact 14kV 1 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras, and MP3 players. Applications Mechanical Data Cellular Handsets Case: X3-ESN0603-2 (Type B) Portable Electronics Case Material: Molded Plastic, Green Molding Compound. Computers and Peripherals UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiAu Bump. Solderable per MIL-STD-202, Method e4 208 Weight: 0.001 grams (Approximate) X3-ESN0603-2 (Type B) Pin 1 Pin 2 Top View Bottom View Device Schematic Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D3V3Q1B2DLP3-7 Standard CD 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D3V3Q1B2DLP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 30 W 8/20s, per Figure 3 PP Peak Pulse Current I 4 A 8/20s, per Figure 3 PP ESD Protection Contact Discharge V 14 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge V 16 kV IEC 61000-4-2 Standard ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) P 250 mW D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range T , T -65 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 3.3 V RWM Channel Leakage Current (Note 6) I 1 50 nA V = 3.3V RM RWM 5.5 I = 1A, t = 8/20s PP p Clamping Voltage, Positive Transients V 6.5 V I = 3A, t = 8/20s CL PP p 7.5 I = 4A, t = 8/20s PP p Breakdown Voltage V 3.8 6.5 V I = 1mA BR R Differential Resistance 0.4 R TLP, 10A, t = 100ns DIF p Channel Input Capacitance 6 9 pF C V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown in Diodes Incorporateds package outline PDFs, which can be found on our website at