D3V3Q1B2LP3 LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V Min I Max C Typ BR PP IN Provides ESD Protection per IEC 61000-4-2 Standard: 3.8V 4A 6pF Air 16kV, Contact 14kV 1 Channel of ESD Protection Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data Case: X3-DFN0603-2 This new generation TVS is designed to protect sensitive electronics Case Material: Molded Plastic, Green Molding Compound. from the damage due to ESD. The combination of small size and high UL Flammability Classification Rating 94V-0 ESD surge capability makes it ideal for use in portable applications Moisture Sensitivity: Level 1 per J-STD-020 such as cellular phones, digital cameras, and MP3 players. Terminals: Matte Tin over Copper Leadframe, per MIL-STD-202, Method 208 Applications Weight: 0.0002 grams (Approximate) Cellular Handsets Portable Electronics Computers and Peripheral X3-DFN0603-2 Pin 2 Pin 1 Top View Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D3V3Q1B2LP3-7 Standard 88 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D3V3Q1B2LP3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 30 W 8/20s, per Figure 1 PP Peak Pulse Current 4 A 8/20s, per Figure 1 IPP ESD Protection Contact Discharge 14 kV IEC 61000-4-2 Standard V ESD CONTACT ESD Protection Air Discharge 16 kV IEC 61000-4-2 Standard V ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 3.3 V V RWM Channel Leakage Current (Note 6) 100 nA I V = 3.3V RM RWM Breakdown Voltage V 3.8 6.5 V I = 1mA BR R 5.8 I = 1A, t = 8/20S PP P Clamping Voltage, Positive Transients V 6.7 V I = 3A, t = 8/20S CL PP P 7.5 I = 4A, t = 8/20S PP P I = 10A to 20A, t = 100ns, TLP P Differential Resistance R 0.4 DYN I/O to GND Channel Input Capacitance 6 9 pF C V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at