D3V3S1U2LP1610 1 CHANNEL HIGH SURGE TVS DIODE Product Summary Features V I C BR (MIN) PP (MAX) T (TYP) Provides ESD Protection per IEC 61000-4-2 Standard: 3.8V 200A 1400pF Air 30kV, Contact 30kV One Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications Mechanical Data such as cellular phones, digital cameras, and MP3 players. Case: U-DFN1610-2 Applications Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Cellular Handsets Moisture Sensitivity: Level 1 per J-STD-020 Portable Electronics Terminals: NiPdAu over Copper Leadframe (Lead Free Plating). Computers and Peripheral e4 Solderable per MIL-STD-202, Method 208 Weight: 0.003 grams (Approximate) Pin 2 Pin 1 Device Schematic Ordering Information (Note 4) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D3V3S1U2LP1610-7 Standard PA2 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See D3V3S1U2LP1610 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current 200 A 8/20s (Note 7) I PP Standard IEC 61000-4-2 ESD Protection Contact Discharge 30 kV V ESD CONTACT Standard IEC 61000-4-2 ESD Protection Air Discharge 30 kV V ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 300 mW P D 417 Thermal Resistance, Junction to Ambient T = +25C R C/W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 3.3 V RWM Channel Leakage Current (Note 6) I 1 A V = 3.3V R R Reverse Breakdown Voltage 3.8 V V I = 1mA BR R 7 V I = 10A, t = 8/20s PP p Clamping Voltage, Positive Transients (Note 7) 8 V V I = 40A, t = 8/20s C PP p 11.5 V I = 200A, t = 8/20s PP p V = 0V, f = 1MHz, Any I/O to R Channel Input Capacitance (Note 8) 1400 pF CT GND Dynamic Resistance R 0.03 TLP, 10A, tp = 100ns DYN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at