D3V3X4U10LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V I C Clamping Voltage: 6V at 16A IEC6100-4-2 BR (MIN) PP (MAX) T (TYP) 5.5V 3 0.45pF IEC61000-4-2 (ESD): Air 8kV, Contact 8kV IEC61000-4-5 (Lightning): 3A (8/20s) 4 Channels of ESD Protection Description Ultra-low Channel Input Capacitance of 0.45pF Typical The D3V3X4U10LP is a high-performance device suitable for TLP Dynamic Resistance: 0.3 protecting four high speed I/Os. These devices are assembled in U- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) DFN2510-10 packages and have high ESD surge capability, low ESD Halogen and Antimony Free. Green Device (Note 3) clamping voltage and Ultra-low capacitance. Mechanical Data Applications Case: U-DFN2510-10 Typically used at high-speed ports such as USB 3.0, USB 3.1, Serial Case Material: Molded Plastic, Green Molding Compound. ATA, Display port. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: NiPdAu over Copper Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 e4 Weight: 0.038 grams (Approximate) U-DFN2510-10 Pin5 Pin1 Pin2 Pin4 10 9 8 7 6 Pin Description 1, 2, 4, 5 I/O 6, 7, 9, 10 No Connection 3, 8 Vss 1 2 3 4 5 3,8 Pin Description (Top View) Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D3V3X4U10LP-7 Standard MU2 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D3V3X4U10LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Condition Peak Pulse Current, per IEC61000-4-5 I 3 A I/O to V , 8/20s PP SS 18 W Peak Pulse Power, per IEC61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC61000-4-2 V 8 kV I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC61000-4-2 V 8 kV I/O to V ESD AIR SS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) 360 C/W R JA Operating and Storage Temperature Range T ,T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Working Voltage 3.3 V V RWM Reverse Current 1.0 A I V = 3.3V, I/O to V R R SS Reverse Breakdown Voltage 5.5 6.2 V V I = 1mA, I/O to V BR R SS Forward Clamping Voltage -1.0 -0.85 V V I = -15mA, I/O to V F F SS Holding Reverse Voltage 1.3 V V I/O to V HOLD SS Reverse Clamping Voltage (Note 6) 3 V V I = 3A, I/O to V , 8/20s C PP SS Clamping Voltage (Note 7) 6 V V TLP, 16A, t = 100ns, I/O to V C P SS Clamping Voltage (Note 7) 5 V V TLP, -16A, t = 100ns, I/O to V C P SS Dynamic Reverse Resistance 0.3 R TLP, 10A, t = 100ns, I/O to V DIF-R P SS Dynamic Forward Resistance 0.2 R TLP, 10A, t = 100ns, V to I/O DIF-F P SS Channel Input Capacitance C 0.45 pF V = 0V, V = 0V, f = 1MHz I/O I/O SS 55 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at