D3V3XA4B10LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V I C Clamping Voltage: 9.4V at 16A TLP BR (Min) PP (Max) I/O (Typ) IEC 61000-4-2 (ESD): Air 12kV, Contact 12kV 5.0V 4.0A 0.28pF IEC 61000-4-5 (Lightning): 4.0A (8/20s) 4 Channels of ESD Protection Ultra-Low Channel Input Capacitance of 0.35pF Max TLP Dynamic Resistance: 0.39 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) The D3V3XA4B10LP is a high-performance device suitable for For automotive applications requiring specific change protecting four high speed I/Os. This device is assembled in U- control (i.e. parts qualified to AEC-Q100/101/200, PPAP DFN2510-10 and U-DFN2510-10 (Type CJ) packages and has high capable, and manufactured in IATF 16949 certified ESD surge capability, low ESD clamping voltage and ultra-low facilities), please contact us or your local Diodes capacitance. representative. D3V3XA4B10LP Marking Information ZS1 = Product Type Marking Code ZS1 = Product Type Marking Code YWX = Date Code Marking YM = Date Code Marking Y = Year (ex: 0 = 2020) TF2 YM ZS1 YWX TF2 YM ZS1 Y = Year (ex: H = 2020) W = Week M = Month (ex: 9 = September) (ex: a=Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U=Monday) Date Code Key for YM Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code F G H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Date Code Key for YWX Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 8 9 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z Maximum Ratings ( TA = +25C, unless otherwise specified.) Conditions Characteristic Symbol Value Unit Peak Pulse Current, per IEC 61000-4-5 4.0 A I/O to V , 8/20s IPP SS 24 W I/O to V , 8/20s Peak Pulse Power, per IEC 61000-4-5 P SS PP ESD Protection Contact Discharge, per IEC 61000-4-2 V 12 kV I/O to VSS ESD CONTACT ESD Protection Air Discharge, per IEC 61000-4-2 V 12 kV I/O to VSS ESD AIR Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) 360 C/W RJA Operating and Storage Temperature Range -55 to +150 C T ,TSTG J Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V VRWM Reverse Current 1.0 A IR VR = 3.3V, I/O to VSS 5.0 9.0 V Reverse Breakdown Voltage VBR IR = 1mA, I/O to VSS Clamping Voltage (Note 6) V 9.4 V TLP, 16A, t = 100ns, I/O to V C P SS Dynamic Reverse Resistance R 0.39 TLP, 10A, t = 100ns, I/O to V DIF P SS Channel Input Capacitance C 0.28 0.35 pF V = 0V, V = 0V, f = 1MHz I/O I/O SS Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at