D55V0M1B2WSQ 55V BIDIRECTIONAL TVS DIODE Product Summary Features and Benefits Provides ESD Protection per IEC 61000-4-2 Standard: V I C BR (Min) PP (Max) T (Typ) Air 30kV, Contact 25kV 57V 2A 14pF 1 Channel of ESD Protection Ideal for 60V MOSFET Protection Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description & Applications Mechanical Data This new generation TVS is designed to protect sensitive electronics Case: SOD323 from the damage due to ESD. The combination of small size and high Case Material: Molded Plastic, Green Molding Compound. UL ESD surge capability makes it ideal for use in Automotive Flammability Classification Rating 94V-0 Infotainment systems. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe USB Modules (Lead Free Plating). Solderable per MIL-STD-202, Method 208 HDMI Inputs Weight: 0.004 grams (Approximate) LVDS SOD323 Pin 1 Pin 2 Device Schematic Bottom View Ordering Information (Note 5) Part Number Compliance Marking Reel Size(inches) Tape Width(mm) Quantity Per Reel D55V0M1B2WSQ-7 Automotive I/I 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D55V0M1B2WSQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation 200 W 8/20s, Per Figure 2 P PP Peak Pulse Current 2 A 8/20s, Per Figure 2 I PP ESD Protection Contact Discharge 25 kV IEC 61000-4-2 Standard V ESD Contact ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard V ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 6) P 250 mW D Thermal Resistance, Junction to Ambient (Note 6) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 55 V V RWM Channel Leakage Current (Note 7) I 100 nA V = 55V RM RWM 86 I = 1A, t = 8/20s PP P Clamping Voltage V V CL 100 I = 2A, t = 8/20s PP P Breakdown Voltage 57 V V I = 1mA BR R Channel Input Capacitance 14 25 pF C V = 0V, f = 1MHz T R Notes: 6. Device mounted on FR-4 PCB pad layout (2oz copper) as shown in Diodes Incorporateds package outline PDFs, which can be found on our website at