PART OBSOLETE NO ALTERNATE PART
D5V0L1B2DLP3
LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Product Summary Features
V I C
BR min pp max in typ Provides ESD Protection per IEC 61000-4-2 Standard:
6V 6A 15pF
Air 30kV, Contact 30kV
1 Channel of ESD Protection
Description Low Channel Input Capacitance
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
This new generation TVS is designed to protect sensitive electronics
Halogen and Antimony Free. Green Device (Note 3)
from the damage due to ESD. The combination of small size and high
ESD surge capability makes it ideal for use in portable applications
Mechanical Data
such as cellular phones, digital cameras, and MP3 players.
Case: X3-ESN0603-2
Case Material: Molded Plastic, Green Molding Compound;
Applications
UL Flammability Classification Rating 94V-0
Cellular Handsets
Moisture Sensitivity: Level 1 per J-STD-020
Portable Electronics
Terminals: NiAu Bump. Solderable per MIL-STD-202, Method
Computers and Peripheral
e4
208
Weight: 0.0002 grams (Approximate)
X3-ESN0603-2
Pin 2
Pin 1
Device Schematic
Bottom View
Top View
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0L1B2DLP3-7 Standard T 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
PART OBSOLETE NO ALTERNATE PART
D5V0L1B2DLP3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Power Dissipation P 84 W 8/20s, per Figure 1
PP
Peak Pulse Current I 6 A 8/20s, per Figure 1
PP
ESD Protection Contact Discharge V 30 kV IEC 61000-4-2 Standard
ESD_Contact
ESD Protection Air Discharge 30 kV IEC 61000-4-2 Standard
V
ESD_Air
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P 250 mW
D
Thermal Resistance, Junction to Ambient (Note 5) 500 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 5 V
RWM
Channel Leakage Current (Note 6) I 10 100 nA V = 5V
RM RWM
7.0 9.0 I = 1A, t = 8/20S
PP p
8.7 10.7
I = 3A, t = 8/20S
PP p
Clamping Voltage, Positive Transients V V
CL
10.5 12.0
I = 5A, t = 8/20S
PP p
11.5 14.0
I = 6A, t = 8/20S
PP p
Breakdown Voltage 6 7 8 V
V I = 1mA
BR R
Differential Resistance R 0.2 I = 1A, t = 8/20S
DIF R p
15 18 V = 0V, f = 1MHz
R
Channel Input Capacitance pF
C
IN
12.5 V = 2.5V, f = 1MHz
R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at