D5V0Q1B2CSP LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V I C Ultra-Small, Low Profile Leadless Surface Mount Package (0.600 * BR (min) PP (max) T (typ) 6.0V 3A 5.5pF 0.300 x 0.300mm) IEC 61000-4-2 (ESD): Air 15kV, Contact 14kV Description IEC 61000-4-5 (Lightning): 3A (8/20s) 1 Channel of ESD Protection This new generation TVS is designed to protect sensitive electronics Low Channel Input Capacitance from the damage due to ESD. The combination of small size and high Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) ESD surge capability makes it ideal for use in portable applications Halogen and Antimony Free. Green Device (Note 3) such as cellular phones, digital cameras and MP3 players. Applications Mechanical Data Case: X2-DSN0603-2 Cellular Handsets Case Material: Chip Scale Package Portable Electronics Computers and Peripheral Terminals: NiAu Bump. Solderable per MIL-STD-202, Method e4 208 Weight: 0.0002 grams (Approximate) X2-DSN0603-2 Top View Bottom View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel D5V0Q1B2CSP-7 Standard S 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See D5V0Q1B2CSP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current I 3 A 8/20s, per Figure 1 PP ESD Protection Contact Discharge V 14 kV IEC 61000-4-2 Standard ESD Contact ESD Protection Air Discharge V 15 kV IEC 61000-4-2 Standard ESD Air Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) R 500 C/W JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage V 5.5 V RWM Channel Leakage Current (Note 6) I 100 nA V = 5.5V RM RWM 7.2 I = 1A, tp = 8/20S PP Clamping Voltage V V CL 8.4 I = 3A, tp = 8/20S PP 5.9 TLP, 1A, tp = 100 ns, I/O to V SS ESD Clamping Voltage V V CL 8.3 TLP, 16A, tp = 100 ns, I/O to V SS Differential Resistance R 0.2 TLP, 10A, tp = 100ns DYN Breakdown Voltage V 6 10 V I = 1mA BR R Channel Input Capacitance C 5.5 pF V = 0V, f = 1MHz T R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout, which can be found on our website at