D5V0X1B2LP3
ULTRA LOW CAPACITANCE BIDIRECTIONAL TVS DIODE
Product Summary Features
V I C
BR (Min) PP (Max) T (Typ) Ultra-Small, Low Profile Leadless Surface Mount Package
7V 1.5A 0.23pF
(0.6mm*0.3mm*0.3mm)
Provides ESD Protection per IEC 61000-4-2 Standard:
Description Air 15kV, Contact 15kV
1 Channel of ESD Protection
This new generation TVS is designed to protect sensitive electronics
Ultra Low Channel Input Capacitance
from the damage due to ESD. The combination of small size and high
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
ESD surge capability makes it ideal for use in portable applications
Halogen and Antimony Free. Green Device (Note 3)
such as cellular phones, digital cameras, and MP3 players.
Mechanical Data
Applications
Case: X2-DFN0603-2
Cellular Handsets
Case Material: Molded Plastic, Green Molding Compound. UL
Portable Electronics
Flammability Classification Rating 94V-0
Computers and Peripheral
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish Matte Tin over Copper Leadframe, Solderable
e3
per MIL-STD-202, Method 208
Weight: 0.0002 grams (Approximate)
Top View Device Schematic
Ordering Information (Note 4)
Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel
D5V0X1B2LP3-7 Standard SS 7 8 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
D5V0X1B2LP3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Unit Conditions
Peak Pulse Current I 1.5 A 8/20s, per Figure 3
PP
ESD Protection Contact Discharge V 15 kV IEC 61000-4-2 Standard
ESD_CONTACT
ESD Protection Air Discharge V 15 kV IEC 61000-4-2 Standard
ESD_AIR
Thermal Characteristics
Characteristic Symbol Value Unit
Package Power Dissipation (Note 5) P 250 mW
D
Thermal Resistance, Junction to Ambient (Note 5) 500 C/W
R
JA
Operating and Storage Temperature Range T , T -65 to +150 C
J STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Conditions
Reverse Standoff Voltage V 5.5 V
RWM
Channel Leakage Current (Note 6) I 100 nA V = 5.0V
RM RWM
Breakdown Voltage V 7.0 V I = 1mA
BR R
Clamping Voltage V 14 V I = 1A, t = 8/20s
CL PP p
0.23 0.4 pF V = 2.5V, f = 1MHz
R
Channel Input Capacitance C
T
0.3 pF V = 0V, f = 1MHz
R
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at