X-On Electronics has gained recognition as a prominent supplier of DDTA123TCA-7-F Bipolar Transistors - Pre-Biased across the USA, India, Europe, Australia, and various other global locations. DDTA123TCA-7-F Bipolar Transistors - Pre-Biased are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - Pre-Biased, ensuring timely deliveries around the world.

DDTA123TCA-7-F Diodes Incorporated

DDTA123TCA-7-F electronic component of Diodes Incorporated
DDTA123TCA-7-F Diodes Incorporated
DDTA123TCA-7-F Bipolar Transistors - Pre-Biased
DDTA123TCA-7-F  Semiconductors

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See Product Specifications
Part No. DDTA123TCA-7-F
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - Pre-Biased
Description: Diodes Incorporated Bipolar Transistors - Pre-Biased 200MW 2.2K
Datasheet: DDTA123TCA-7-F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
12000: USD 0.0273 ea
Line Total: USD 327.6 
Availability - 26190
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ: 12000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2832
Ship by Fri. 11 Jul to Wed. 16 Jul
MOQ : 10
Multiples : 10
10 : USD 0.0814
100 : USD 0.0658
300 : USD 0.058
3000 : USD 0.0352
6000 : USD 0.032
9000 : USD 0.0304

26190
Ship by Fri. 04 Jul to Thu. 10 Jul
MOQ : 12000
Multiples : 3000
12000 : USD 0.0273

   
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RoHS - XON
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Typical Input Resistor
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DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
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We are delighted to provide the DDTA123TCA-7-F from our Bipolar Transistors - Pre-Biased category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DDTA123TCA-7-F and other electronic components in the Bipolar Transistors - Pre-Biased category and beyond.

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DDTA (R1-ONLY SERIES) CA PNP PRE-BIASED TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 only UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Moisture Sensitivity: Level 1 per J-STD-020 Halogen and Antimony Free. Green Device (Note 3) Terminals: Finish Matte Tin Plated Leads, Solderable per For automotive applications requiring specific change MIL-STD-202, Method 208 control (i.e. parts qualified to AEC-Q100/101/200, PPAP Weight: 0.008 grams (approximate) certified facilities), capable, and manufactured in IATF 16949 please contact us or your local Diodes representative. DDTA (R1-ONLY SERIES) CA Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V -50 V CBO Collector-Emitter Voltage V -50 V CEO Emitter-Base Voltage V -5 V EBO Collector Current (Max) -100 mA IC Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) P 200 mW D Thermal Resistance, Junction to Ambient Air (Note 5) R 625 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Collector-Base Breakdown Voltage -50 V BV I = -50A CBO C Collector-Emitter Breakdown Voltage -50 V BV I = -1mA CEO C Emitter-Base Breakdown Voltage -5 V BV I = -50A EBO E Collector Cutoff Current I -0.5 A V = -50V CBO CB Emitter Cutoff Current I -0.5 A V = -4V EBO EB I I = -10mA/-1mA DDTA113TCA C/ B I = -5mA/-0.5mA DDTA123TCA IC/ B I I = -2.5mA/-0.25mA DDTA143TCA C/ B I I = -1mA/-0.1mA DDTA114TCA C/ B Collector-Emitter Saturation Voltage V -0.3 V CE(sat) I I = -5mA/-0.5mA DDTA124TCA C/ B I I = -2.5mA/-0.25mA DDTA144TCA C/ B I I = -1mA/-0.1mA DDTA115TCA C/ B I I = -0.5mA/-0.05mA DDTA125TCA C/ B DC Current Transfer Ratio 100 250 600 h I = -1mA, V = -5V FE C CE -30 +30 % Input Resistor (R ) Tolerance R 1 1 V = -10V, I = -5mA, CE E Gain-Bandwidth Product (Note 6) f 250 MHz T f = 100MHz Notes: 5. Mounted on FR4 PC Board with minimum recommended pad layout 6. Transistor - For Reference Only 2 of 5 June 2021 DDTA (R1-ONLY SERIES) CA Diodes Incorporated www.diodes.com Document number: DS30335 Rev. 7 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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