DESD5V0V1BCSP LOW CAPACITANCE BIDIRECTIONAL TVS DIODE Product Summary Features V Min I Max C Typ BR PP IN Provides ESD Protection per IEC 61000-4-2 Standard: 6V 2A 5.3pF Air 15kV, Contact 14kV 1 Channel of ESD Protection Description Low Channel Input Capacitance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This new generation TVS is designed to protect sensitive electronics Halogen and Antimony Free. Green Device (Note 3) from the damage due to ESD. The combination of small size and high ESD surge capability makes it ideal for use in portable applications such as cellular phones, digital cameras and MP3 players. Mechanical Data Applications Case: X2-DSN0603-2 Cellular Handsets Case Material: Chip Scale Package Portable Electronics Terminals: NiAu Bump. Solderable per MIL-STD-202, Method Computers and Peripheral e4 208 Weight: 0.0002 grams (Approximate) X2-DSN0603-2 Pin 2 Pin 1 Top View Device Schematic Bottom View Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DESD5V0V1BCSP-7 Standard S 7 8 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DESD5V0V1BCSP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Power Dissipation P 20 W 8/20s, See Figure 3 PP Peak Pulse Current I 2 A 8/20s, See Figure 3 PP ESD Protection Contact Discharge V 14 kV IEC 61000-4-2 Standard ESD CONTACT ESD Protection Air Discharge 15 kV IEC 61000-4-2 Standard V ESD AIR ESD Protection Human Body Model 10 kV MIL-STD-883 Class 3B V ESD HBM Thermal Characteristics Characteristic Symbol Value Unit Package Power Dissipation (Note 5) 250 mW P D Thermal Resistance, Junction to Ambient (Note 5) 500 C/W R JA Operating and Storage Temperature Range -65 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Standoff Voltage 5 V V RWM Channel Leakage Current (Note 6) 1 100 nA I V = 5V RM RWM Snapback Voltage 5.3 V V SNP 11.5 I = 0.5A, t = 8/20S PP P Clamping Voltage, Positive Transients V VCL 12.8 I = 1A, t = 8/20S PP P Breakdown Voltage V 6 10 V I = 1mA BR R Differential Resistance R 2.0 TLP, 10A, t = 100ns DYN P Channel Input Capacitance C 4 5.3 6 pF V = 0V, f = 1MHz IN R Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds website at