X-On Electronics has gained recognition as a prominent supplier of DGTD120T40S1PT IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. DGTD120T40S1PT IGBT Transistors are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

DGTD120T40S1PT Diodes Incorporated

DGTD120T40S1PT electronic component of Diodes Incorporated
DGTD120T40S1PT Diodes Incorporated
DGTD120T40S1PT IGBT Transistors
DGTD120T40S1PT  Semiconductors

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See Product Specifications
Part No. DGTD120T40S1PT
Manufacturer: Diodes Incorporated
Category: IGBT Transistors
Description: IGBT Transistors IGBT 1200V-X TO247 TUBE 0.45K
Datasheet: DGTD120T40S1PT Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 450
Multiples : 450
450 : USD 3.4118
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.209
10 : USD 1.989
30 : USD 1.8547
100 : USD 1.7489
102 : USD 1.7489
104 : USD 1.7489
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 10.9233
10 : USD 9.3627
25 : USD 8.4933
100 : USD 7.8023
250 : USD 7.3453
450 : USD 6.8772
900 : USD 6.4982
5400 : USD 6.487
N/A

Obsolete
   
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DGTD120T40S1PT from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DGTD120T40S1PT and other electronic components in the IGBT Transistors category and beyond.

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DGTD120T40S1PT Green 1200V FIELD STO P IGBT IN TO247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat), excellent quality VCE(sat) = 2.0V IC = 40A and high switching performance. High Input Impedance trr = 100ns (typ) diF/dt = 200A/s Ultra Soft, Fast Recovery Anti-parallel Diode Ultra Narrowed VF Distribution Control Lead-Free Finish & RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DGTD120T40S1PT Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage 1200 V VCE T = +25C 80 A C DC Collector Current IC T = +100C 40 A C Pulsed Collector Current, t Limited by T I 160 A p vjmax CM T = +25C 80 A C Diode Forward Current IF 40 A TC = +100C 160 A Diode Pulsed Current, tp Limited by Tvjmax IFM Gate-Emitter Voltage 20 V VGES Short Circuit Withstand Time VCC 600V, VGE = 15V, Tvj = +150C 10 s tsc < Allowed Number of Short Circuits 1000 Time Between Short Circuits 1.0s Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit T = +25C 357 C Power Dissipation Linear Derating Factor (Note 6) W PD 142 TC = +100C Thermal Resistance, Junction to Ambient (Note 6) 40 RJA Thermal Resistance, Junction to Case for IBGT (Note 6) 0.35 C/W RJC Thermal Resistance, Junction to Case for Diode (Note 6) 0.80 RJC Operating Temperature -55 to +150 Tvj C Storage Temperature Range -55 to +150 TSTG Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. 2 of 9 DGTD120T40S1PT June 2020 Diodes Incorporated www.diodes.com Document number: DS39664 Rev. 2 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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