DGTD120T40S1PT Green 1200V FIELD STO P IGBT IN TO247 Description Features The DGTD120T40S1PT is produced using advanced Field Stop High-Speed Switching & Low Power Loss Trench IGBT Technology, which provides low VCE(sat), excellent quality VCE(sat) = 2.0V IC = 40A and high switching performance. High Input Impedance trr = 100ns (typ) diF/dt = 200A/s Ultra Soft, Fast Recovery Anti-parallel Diode Ultra Narrowed VF Distribution Control Lead-Free Finish & RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DGTD120T40S1PT Absolute Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Emitter Voltage 1200 V VCE T = +25C 80 A C DC Collector Current IC T = +100C 40 A C Pulsed Collector Current, t Limited by T I 160 A p vjmax CM T = +25C 80 A C Diode Forward Current IF 40 A TC = +100C 160 A Diode Pulsed Current, tp Limited by Tvjmax IFM Gate-Emitter Voltage 20 V VGES Short Circuit Withstand Time VCC 600V, VGE = 15V, Tvj = +150C 10 s tsc < Allowed Number of Short Circuits 1000 Time Between Short Circuits 1.0s Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit T = +25C 357 C Power Dissipation Linear Derating Factor (Note 6) W PD 142 TC = +100C Thermal Resistance, Junction to Ambient (Note 6) 40 RJA Thermal Resistance, Junction to Case for IBGT (Note 6) 0.35 C/W RJC Thermal Resistance, Junction to Case for Diode (Note 6) 0.80 RJC Operating Temperature -55 to +150 Tvj C Storage Temperature Range -55 to +150 TSTG Note: 6. When mounted on a standard JEDEC 2-layer FR-4 board. 2 of 9 DGTD120T40S1PT June 2020 Diodes Incorporated www.diodes.com Document number: DS39664 Rev. 2 - 2