DMMT5401 MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Complementary NPN Type Available (DMMT5551) E E C 1 2 2 Dim Min Max Typ Ideal for Low Power Amplification and Switching A 0.35 0.50 0.38 Intrinsically Matched PNP Pair (Note 1) C B B 1.50 1.70 1.60 2% Matched Tolerance, h , V , V FE CE(SAT) BE(SAT) Lead Free/RoHS Compliant (Note 4) C 2.70 3.00 2.80 C B B 1 1 2 Gree Device (Note 5 and 6) D 0.95 F 0.55 Mechanical Data H H 2.90 3.10 3.00 Case: SOT-26 K J 0.013 0.10 0.05 M Case Material: Molded Plastic,Gree Molding K 1.00 1.30 1.10 Compound, Note 6. UL Flammability Classification Rating 94V-0 L 0.35 0.55 0.40 J F L D Moisture Sensitivity: Level 1 per J-STD-020C M 0.10 0.20 0.15 Terminal Connections: See Diagram EE EE CC 0 8 11 22 22 Terminals: Solderable per MIL-STD-202, Method 208 All Dimensions in mm Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). Marking Information: K4S, See Page 3 Ordering & Date Code Information: See Page 3 CC BB BB 11 11 22 Weight: 0.006 grams (approximate) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V -160 V CBO Collector-Emitter Voltage V -150 V CEO Emitter-Base Voltage -5.0 V V EBO Collector Current - Continuous (Note 2) -200 mA I C Power Dissipation (Note 2, 3) P 300 mW d Thermal Resistance, Junction to Ambient (Note 2) 417 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Built with adjacent die from a single wafer. 2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in. pad layout as shown on suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage V -160 V I = -100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V -150 V I = -1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage -5.0 V V I = -10A, I = 0 (BR)EBO E C nA V = -120V, I = 0 CB E Collector Cutoff Current -50 I CBO A V = -120V, I = 0, T = 100C CB E A Emitter Cutoff Current -50 nA I V = -3.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 7) I = -1.0mA, V = -5.0V 50 C CE DC Current Gain (Note 8) 60 240 h I = -10mA, V = -5.0V FE C CE 50 I = -50mA, V = -5.0V C CE -0.2 I = -10mA, I = -1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) -0.5 I = -50mA, I = -5.0mA C B I = -10mA, I = -1.0mA C B Base-Emitter Saturation Voltage V -1.0 V BE(SAT) I = -50mA, I = -5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.0 pF V = -10V, f = 1.0MHz, I = 0 obo CB E V = -10V, I = -1.0mA, CE C Small Signal Current Gain h 40 200 fe f = 1.0kHz V = -10V, I = -10mA, CE C Current Gain-Bandwidth Product 100 300 MHz f T f = 100MHz V = -5.0V, I = -200A, CE C Noise Figure NF 8.0 dB R = 10, f = 1.0kHz S Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. The DC Current Gain, h , (matched at I = -10mA and V = -5V) Collector Emitter Saturation Voltage, V , and Base Emitter Saturation Voltage, FE C CE CE(SAT) V are matched with typical matched tolerances of 1% and maximum of 2%. BE(SAT) 400 10.0 I C = 10 350 I B 300 1.0 250 T = 150C 200 A 150 0.1 100 T = -50C A 50 T = 25C A 0 0.01 0 25 50 150 175 200 75 100 125 1 10 100 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current DS30437 Rev. 6 - 2 2 of 4 DMMT5401 Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D V , COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V)