DT1042-04SOQ 4 CHANNELS LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features And Benefits V I C BR MIN PP MAX I/O TYP Low Clamping Voltage, I/O to V SS 6.2V 6A 0.65pF Typical 9V at 10A 100ns, TLP Typical 7.7V at 6A 8s/20s IEC61000-4-2 (ESD): Air 16kV, Contact 16kV 4 Channels of ESD Protection Low Channel Input Capacitance of 0.65pF Typical TLP Dynamic Resistance: 0.25 Typically Used for High Speed Ports such as USB 2.0 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen- and Antimony-Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High-Reliability PPAP Capable (Note 4) Mechanical Data Description And Applications This new generation TVS is designed to protect sensitive electronics Case: SOT26 from the damage due to ESD. The combination of its small size and Case Material: Molded Plastic, Green Molding Compound. high ESD surge capability makes it ideal for use in automotive UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Copper Lead-frame USB Modules (Lead-Free Plating). Solderable per MIL-STD-202, Method 208 HDMI Ports Weight: 0.016 grams (Approximate) LVDS I/O4 V I/O3 CC SOT26 I/O1 V I/O2 SS Top View Device Schematic Ordering Information (Note 5) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DT1042-04SOQ-7 Automotive BC1 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DT1042-04SOQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, Per IEC61000-4-5 I 6 A I/O to V , 8/20s PP I/O SS Peak Pulse Power, Per IEC61000-4-5 P 55 W I/O to V , 8/20s PP I/O SS Operating Voltage (DC) V 5.5 V I/O to V DC SS ESD Protection Contact Discharge, Per IEC61000-4-2 16 kV VESD CONTACT I/O to VSS ESD Protection Air Discharge, Per IEC61000-4-2 16 kV V I/O to V ESD AIR SS Operating Temperature -55 to +150 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 6) 300 mW P D Thermal Resistance, Junction to Ambient Typical (Note 5) 417 C/W R JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage V 5.0 V V to V RWM CC SS Reverse Current (Note 7) I (V to V ) 1.0 A V = V = 5V, V to V R CC SS R RWM CC SS Reverse Current (Note 7) 0.5 A I (I/O to V ) V = V = 5V, any I/O to V R SS R RWM SS Reverse Breakdown Voltage 6.2 V V I = 1mA, V to V BR R CC SS Forward Clamping Voltage V -1.0 -0.8 V I = -15mA, V to V F F CC SS 6.3 V = 9A, V to V , 8/20s VC VCC IPP CC SS Reverse Clamping Voltage (Note 8) 7.7 9 V V I = 6A, I/O to V , 8/20s C I/O PP SS TLP, 10A, t = 100ns, V to V , P CC SS V 6.8 V ESD VCC Per Figure 8 ESD Clamping Voltage TLP, 10A, t = 100ns, I/O to V , P SS V 9 V ESD I/O Per Figure 8 0.1 R TLP, 10A, t = 100ns, V to V DIF VCC P CC SS Dynamic Resistance R 0.25 TLP, 10A, t = 100ns, I/O to V DIF I/O P SS Channel Input Capacitance C 0.65 0.8 pF V = 2.5V, V = 5V, f = 1MHz I/O R CC Variation of Channel Input V = 5V, V = 0V, I/O = 2.5V, f = 1MHz, CC SS C 0.02 pF I/O Capacitance I/O x to V I/O y to V SS SS Notes: 6. Device mounted on Polymide PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at