DT1240-08LP3810 8 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features Clamping Voltage: 9V at 10A 100ns, TLP 9.4V at 5.5A (8s/20s) V (Min) I (Max) C (Typ) BR PP I/O IEC 61000-4-2 (ESD): Air 16kV, Contact 14kV 6V 5.5A 0.6pF IEC 61000-4-5 (Lighting): 5.5A (8/20s) 8 Channels of ESD Protection Low Channel Input Capacitance of 0.6pF Typical TLP Dynamic Resistance: 0.30 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description Halogen and Antimony Free. Green Device (Note 3) The DT1240-08LP3810 is a high-performance device suitable for For automotive applications requiring specific change protecting four high-speed I/Os. These devices are assembled in U- control (i.e. parts qualified to AEC-Q100/101/200, PPAP DFN3810-9 (Type B) package and have high ESD surge capability capable, and manufactured in IATF 16949 certified facilities), and low capacitance. please contact us or your local Diodes representative DT1240-08LP3810 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 I 5.5 A I/O to V , 8/20s PP SS 60 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 14 kV I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 V 16 kV I/O to V ESD AIR SS Operating Temperature T OP -55 to +85 C Storage Temperature TSTG -55 to +150 C Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) 350 mW PD Thermal Resistance, Junction to Ambient Typical (Note 5) R 360 C/W JA Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 5.5 V VRWM Reverse Current 0.5 A IR VR = 5.5V, I/O to VSS Reverse Breakdown Voltage 6 V VBR IR = 1mA, I/O to VSS Forward Clamping Voltage -1.0 -0.85 V VF IF = -15mA, I/O to VSS Reverse Clamping Voltage (Note 6) 9.4 11 V VC IPP = 5.5A, I/O to VSS, 8/20s ESD Clamping Voltage 9 V V TLP, 10A, t = 100ns, I/O to V ESD P SS Dynamic Reverse Resistance 0.3 R TLP, 10A, t = 100ns, I/O to V DIF-R P SS Dynamic Forward Resistance 0.25 R TLP, 10A, t = 100ns, V to I/O DIF-F P SS Channel Input Capacitance 0.6 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS 55 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds website at