DT1240A-04LP20 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V (Min) I (Max) C (Typ) Clamping Voltage: 7.5V at 10A 100ns, TLP BR PP I/O 5V 5.5A 0.55pF 7V at 5.5A 8s/20s IEC 61000-4-2 (ESD): Air 16kV, Contact 14kV IEC 61000-4-5 (Lightning): 5.5A (8s/20s) 4 Channels of ESD Protection Description Low Channel Input Capacitance of 0.55pF Typical The DT1240A-04LP20 is a high-performance device suitable for TLP Dynamic Resistance: 0.22 protecting four high speed I/Os. These devices are assembled in X2- Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) DFN2010-8 (Type B) package and have high ESD surge capability Halogen and Antimony Free. Green Device (Note 3) and low capacitance. For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), Applications please contact us or your local Diodes representative. Typically used at high-speed ports such as USB2.0, USB3.0, USB3.1, DT1240A-04LP20 Marking Information MU5 = Product Type Marking Code YM = Date Code Marking TF2 YM MU5 Y = Year (ex: I = 2021) M = Month (ex: 9 = September) Date Code Key Year 2018 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030 Code F I J K L M N O P R S Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 5.5 A IPP I/O to VSS, 8/20s 38 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 14 kV I/O to V ESD CONTACT SS ESD Protection Air Discharge, per IEC 61000-4-2 V 16 kV I/O to V ESD AIR SS Operating Temperature -55 to +85 C T OP Storage Temperature T -55 to +150 C STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) P 360 mW D Thermal Resistance, Junction to Ambient Typical (Note 5) 350 C/W R JA Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V VRWM Reverse Current 1.0 A IR VR = 3.3V, I/O to VSS Reverse Breakdown Voltage 5 V VBR IR = 1mA, I/O to VSS Forward Clamping Voltage -1.0 -0.85 V V I = -15mA, I/O to V F F SS Reverse Clamping Voltage (Note 6) 7 8.5 V V I = 5.5A, I/O to V , 8/20s C PP SS ESD Clamping Voltage 7.5 V V TLP, 10A, t = 100ns, I/O to V ESD P SS Dynamic Reverse Resistance 0.22 R TLP, 10A, t = 100ns, I/O to V DIF-R P SS Dynamic Forward Resistance 0.22 R TLP, 10A, t = 100ns, V to I/O DIF-F P SS Channel Input Capacitance 0.55 0.65 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS 55 Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes Incorporateds suggested pad layout, which can be found on our website at