DT1240V3-04LP 4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Product Summary Features V I C Clamping Voltage: 8.8V at 10A 100ns, TLP BR (min) PP (max) T (typ) 6V 5.5A 0.55pF 9V at 5.5A 8s/20s IEC 61000-4-2 (ESD): Air 16kV, Contact 14kV IEC 61000-4-5 (Lightning): 5.5A (8/20s) Description 4 Channels of ESD protection The DT1240V3-04LP-7 is a high-performance device suitable for Low Channel Input Capacitance of 0.55pF Typical protecting four high speed I/Os. These devices are assembled in TLP Dynamic Resistance: 0.3 DFN2510-10 packages and have high ESD surge capability and low Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) capacitance. Halogen and Antimony Free. Green Device (Note 3) Applications Mechanical Data Typically used at high-speed ports such as USB 2.0, IEEE1394 Case: U-DFN2510-10 (Firewire, iLink), Serial ATA, DVI, HDMI, PCI. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Schematic Terminals: Finish NiPdAu, Solderable per MIL-STD-202, Method 208 e4 Weight: 0.038 grams (Approximate) U-DFN2510-10 10 9 8 7 6 Pin Description 1, 2, 4, 5 I/O Pin 1 Pin 2 Pin 4 Pin 5 6, 7, 9, 10 No Connection 3, 8 V ss 1 2 3 4 5 3,8 Pin Description (Top View) Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DT1240V3-04LP-7 Standard BE7 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DT1240V3-04LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current, per IEC 61000-4-5 I 5.5 A I/O to V , 8/20s PP SS 60 W Peak Pulse Power, per IEC 61000-4-5 P I/O to V , 8/20s PP SS ESD Protection Contact Discharge, per IEC 61000-4-2 V 14 kV I/O to V ESD Contact SS ESD Protection Air Discharge, per IEC 61000-4-2 V 16 kV I/O to V ESD Air SS Operating Temperature -55 to +85 C T OP Storage Temperature -55 to +150 C T STG Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation Typical (Note 5) 350 mW P D Thermal Resistance, Junction to Ambient Typical (Note 5) R 360 C/W JA Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 3.3 V V I =1mA, , I/O to V RWM R SS Reverse Current 0.5 A I V = 3.3V, I/O to V R R SS Reverse Breakdown Voltage 6 V V I = 1mA, I/O to V BR R SS Forward Clamping Voltage V -1.0 -0.85 V I = -15mA, I/O to V F F SS 11 Reverse Clamping Voltage (Note 6) V 9 V I = 5.5A, I/O to V , 8/20s C PP SS Trigger Voltage V 9.5 V TRIG ESD Clamping Voltage 8.8 V V TLP, 10A, tp = 100 ns, I/O to V ESD SS Dynamic Reverse Resistance 0.3 R TLP, 10A, tp = 100 ns, I/O to V DIF-R SS Dynamic Forward Resistance 0.25 R TLP, 10A, tp = 100 ns, V to I/O DIF-F SS Channel Input Capacitance (Note7) 0.55 0.65 pF C V = 2.5V, V = 0V, f = 1MHz I/O I/O SS 55 0.04 pF Delta C C -C C -C I/O I/OMAX I/OMIN I/OMAX I/OMIN Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at