DT1452-02SO 2 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY Features Mechanical Data IEC 61000-4-2 (ESD): Air 16kV, Contact 16kV Case: SOT23 IEC 61000-4-4 (EFT) Additional Level, 55A (5/50ns) Case Material: Molded Plastic, Green Molding Compound. IEC 61000-4-5 (Lightning): 12A (8/20s) UL Flammability Classification Rating 94V-0 2 Channels of ESD protection Moisture Sensitivity: Level 1 per J-STD-020 Low Channel Input Capacitance of 1.2pF Typical Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe Typically Used at High Speed Ports such as USB 2.0, (Lead-free Plating). Solderable per MIL-STD-202, Method 208 IEEE1394, Serial ATA, DVI, HDMI, PCI Weight: 0.009 grams (Approximate) Totally Lead-free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) SOT23 I/O 1 V SS I/O 2 Top View Device Schematic Ordering Information (Note 4) Product Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DT1452-02SO-7 Standard BD1 7 8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DT1452-02SO Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Conditions Peak Pulse Current 12 A I I/O to V , 8/20s PP I/O SS ESD Protection Contact Discharge 16 kV V I/O to V , per IEC 61000-4-2 ESD I/O Contact SS ESD Protection Air Discharge V 16 kV I/O to V , per IEC 61000-4-2 ESD I/O Air SS Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) P 300 mW D Thermal Resistance, Junction to Ambient (Note 5) R 417 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Conditions Reverse Working Voltage 5.5 V V RWM Reverse Leakage Current (Note 6) 1.0 A I V =5V, I/O to V R R SS Reverse Breakdown Voltage 7 10 V V I = 1mA, I/O to V BR R SS Forward Voltage V 0.85 1.1 V I = 15mA, V to I/O F F SS Reverse Clamping Voltage (Note 7) V 7.5 V I = 5A, I/O to V , 8/20s C PP SS Reverse Clamping Voltage (Note 7) V 9.5 V I = 12A, I/O to V , 8/20s C PP SS ESD Clamping Voltage V 11 V TLP, 20A, tp = 100 ns, I/O to V , per Figure 7 ESD SS Dynamic Resistance R 0.22 TLP, 20A, tp = 100 ns, I/O to V , per Figure 7 DIF SS Channel Input Capacitance C 1.2 1.7 pF V = 2.5V, f = 1MHz I/O R V = 0V, I/O = 2.5V, f =1MHz, T=+25C , SS Variation of Channel Input Capacitance 0.03 pF C I/O I/O x to V I/O y to V SS SS Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at