The KBJ410G is an N-channel junction field-effect transistor (JFET) manufactured by Diodes Incorporated. It is a low-noise device intended for use in RF, IF, and audio applications. It features a low noise figure, a high forward transconductance, and a low cut-off frequency. It is constructed in a TO-92 package with a drain current rating of 500mA, a reverse leakage current of 5nA, and a maximum power dissipation of 500mW.