NOT RECOMMENDED FOR NEW DESIGN - SBRT4M30LP CONTACT US 4A TrenchSBR TRENCH SUPER BARRIER RECTIFIER Product Summary ( T = +25C) Features and Benefits A V (V) I (A) V MAX (V) I (A) Reduced ultra-low forward voltage drop (V ) Better efficiency RRM O F R MAX F 30 4 0.51 60 and cooler operation. Reduced high temperature reverse leakage Increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data The SBRT4M30LP is a 4A, 30V single rectifier packaged in the low Case: U-DFN3030-8 profile DFN3030 package. Providing low VF and excellent high Case Material: Molded Plastic, Green Molding Compound temperature stability, this device is ideal for use in general UL Flammability Classification Rating 94V-0 rectification applications such as: Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu Annealed over Copper Leadframe. e4 Bypass Diode Solderable per MIL-STD-202, Method 208 Boost Diode Weight: 0.0172 grams (Approximate) Blocking Diode Recirculating Diode U-DFN3030-8 Top View Bottom View Schematic and Pin Configuration Ordering Information (Note 4) Part Number Qualification Case Packaging SBRT4M30LP-7 Commercial U-DFN3030-8 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SBRT4M30LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitance load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 30 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 4 A O Non-Repetitive Peak Forward Surge Current 8.3ms 40 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Ambient (Note 5) 148 C/W R JA Typical Thermal Resistance Junction to Case (Note 5) 25 C/W R JC Typical Thermal Resistance Junction to Ambient (Note 6) 72 C/W R JA Typical Thermal Resistance Junction to Case (Note 6) 7 C/W R JC Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition I = 3A, T = +25C 0.43 0.48 F J Forward Voltage Drop V 0.51 V I = 4A, T = +25C F F J 0.38 IF = 4A, TJ = +125C 5 60 A V = 30V, T = +25C R J Leakage Current (Note 7) I R 1.7 mA V = 30V, T = +125C R J Total Capacitance CT 150 pF f = 1MHz, VR = 30V IF =0.5A, IR =1.0A, Reverse Recovery Time Trr 30 ns IRR=0.25A Notes: 5. Test with FR-4 substrate PC board, 2oz copper, 1*MRP. 6. Test with PC board, 1-inch sq. copper pad, 2oz. 7. Short duration pulse test used to minimize self-heating effect. SBR is registered trademarks of Diodes Incorporated. 2 of 5 April 2021 SBRT4M30LP Diodes Incorporated www.diodes.com Document number: DS37463 Rev. 4 - 3 ADVANADVANNECWECD PE IR INFODNFORUCORMMTA ATTIOIONN ADVANCE INFORMATION New Product ADVANCED IN FORMATION