SDM10M45SD SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data Fast Switching Speed Case: SOT-26 Ultra-Small Surface Mount Package Case Material: Molded Plastic,Gree Molding Compound, Note 6. UL Flammability Classification 94V-0 For General Purpose Switching Applications Moisture Sensitivity: Level 1 per J-STD-020D High Conductance Terminals: Solderable per MIL-STD-202, Method 208 Lead Free/RoHS Compliant (Note 3) Lead Free Plating (Matte Tin Finish annealed over Copper Gree Device (Note 4 and 5) leadframe). Polarity: See Diagram Marking Information: See Page 3 Ordering Information: See Page 3 Weight: 0.016 grams (approximate) Top View Device Schematic Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 45 V V RWM DC Blocking Voltage V R RMS Reverse Voltage V 40 V R(RMS) Forward Continuous Current (Note 1) I 100 mA FM Forward Surge Current t < 8.3ms I 1.0 A FSM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 1) P 225 mW D Thermal Resistance Junction to Ambient Air (Note 1) 444 C/W R JA Operating and Storage Temperature Range -40 to +125 T , T C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage (Note 2) 45 V I = 100A (BR)R R Forward Voltage V 370 450 mV I = 10mA F F Reverse Leakage Current (Note 2) I 0.07 1.0 A V = 10V R R Total Capacitance C 6.0 pF V = 10V, f = 1.0MHz T R Notes: 1. Device mounted on FR-5 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at SDM10M45SD 1,000 100 T = 125C A 100 T = 75C A 10 T = 25C 10 A 1.0 T = -25C A 1.0 0.1 0.1 0.01 200 400 0 600 800 1.0 0 10 20 30 40 V , INSTANTANEOUS FORWARD VOLTAGE (V) V , INSTANTANEOUS REVERSE VOLTAGE (V) R F Fig. 1 Typical Forward Characteristics Fig. 2 Typical Reverse Characteristics 100 100 T = 25C j f = 1MHz 80 60 10 40 20 T = 125C j 1.0 0 015 105 20 25 30 35 40 0 125 150 25 50 75 100 V , DC REVERSE VOLTAGE (V) R T , AMBIENT TEMPERATURE (C) A Fig. 3 Total Capacitance vs. Reverse Voltage, Per Element Fig. 4 Forward Current Derating Curve (Per Element) 250 200 150 100 50 0 0100 200 T , AMBIENT TEMPERATURE (C) A Fig. 5 Power Derating Curve 2 of 3 July 2008 SDM10M45SD Diodes Incorporated www.diodes.com Document number: DS30386 Rev. 6 - 2 C , TOTAL CAPACITANCE (pF) T P , POWER DISSIPATION (mW) I , INSTANTANEOUS FORWARD CURRENT (mA) D F I AVERAGE RECTIFIED CURRENT (mA) , O