SDM1100LP 1A SCHOTTKY BARRIER RECTIFIER Product Summary Features and Benefits Guard Ring Die Construction Transient Protection V (V) I (A) F(MAX) R(MAX) V (V) I (A) RRM O +25C +25C Low Power Loss. High Efficiency 100 1 0.77 0.35 Reduced ultra-low forward voltage drop (V ) Better efficiency F and cooler operation. Reduced high temperature reverse leakage and increased reliability against thermal runaway failure in high temperature operation. Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications Case: U-DFN2020-2 (Type B) The Schottky Barrier Rectifier is designed with low V and low reverse F Case Material: Molded Plastic, Green Molding Compound leakage in the low profile U-DFN2020-2 (Type B) package. It is ideal for UL Flammability Classification Rating 94V-0 use as a rectifier, freewheel diode or blocking diode in applications Moisture Sensitivity: Level 1 per J-STD-020 such as: Terminals: Finish - Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Blocking Diode Polarity: See Below Boost Diode Weight: 6.757mg (Approximate) Recirculating Diode U-DFN2020-2 (Type B) Top View Bottom View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging SDM1100LP-7 U-DFN2020-2 (Type B) 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See SDM1100LP Maximum Ratings ( T = +25C, unless otherwise specified.) A Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Symbol Value Unit V Peak Repetitive Reverse Voltage RRM Working Peak Reverse Voltage 100 V V RWM DC Blocking Voltage V RM Average Rectified Output Current I 1 A O Non-Repetitive Peak Forward Surge Current 8.3ms 40 A I FSM Single Half Sine-Wave Superimposed on Rated Load Thermal Characteristics Characteristic Symbol Value Unit Typical Thermal Resistance Junction to Case (Note 5) R 16 C/W JC Typical Thermal Resistance Junction to Ambient (Note 5) R 65 C/W JA Operating Temperature Range T -55 to +175 C J Storage Temperature Range T -55 to +175 C STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition Reverse Breakdown Voltage V 100 V I =1mA (BR)R R 0.77 IF = 1A, TJ = +25C 0.58 0.62 I = 1A, T = +125C F J Forward Voltage (Note 6) V V F 0.86 I = 2A, T = +25C F J 0.65 0.70 I = 2A, T = +125C F J 0.1 A V = 50V, T = +25C R J 0.015 mA V = 50V, T = +85C R J Leakage Current (Note 6) IR 0.35 A V = 100V, T = +25C R J 0.35 mA V = 100V, T = +125C R J Total Capacitance pF C 40 V = 5V, f = 1MHz T R Notes: 5. Device mounted 1inch sq. copper pad, 2oz. 6. Short duration pulse test used to minimize self-heating effect. ) A 1000 10 ( T = 175C T A N E T = 175C A T = 150C R A R 100 U 1 C T = 125C A T = 150C A D R 10 A W R 0.1 T = 85C A T = 85C A O T = 125C A F 1 S U O T = 25C A 0.01 E N 0.1 A T N A T = -55C T A T = 25C A 0.001 S 0.01 N I , T = -55C F A I 0.001 0.0001 0 100 200 300 400 500 600 700 800 900 1000 0 20 40 60 80 100 V , INSTANTANEOUS FORWARD VOLTAGE (mV) V , INSTANTANEOUS REVERSE VOLTAGE (V) F R Figure 1 Typical Forward Characteristics Figure 2 Typical Reverse Characteristics 2 of 5 SDM1100LP April 2016 Diodes Incorporated www.diodes.com Document number: DS38515 Rev. 2 - 2 ADVANNECWE PDR IONDFORMATION NEW PRODUCT A DVANCED INFORMATION I , INSTANTANEOUS FORWARD CURRENT (A) F UCT I , INSTANTANEOUS REVERSE CURRENT (A) R