Product Information

BC337-25

BC337-25 electronic component of Diotec

Datasheet
Transistor: NPN; bipolar; 45V; 800mA; 625mW; TO92
Manufacturer: Diotec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

397: USD 0.0366 ea
Line Total: USD 14.53

679 - Global Stock
Ships to you between
Mon. 06 May to Fri. 10 May
MOQ: 397  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
12511 - Warehouse 1


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1
Multiples : 1

Stock Image

BC337-25
Diotec

1 : USD 0.299
10 : USD 0.2119
25 : USD 0.1534
100 : USD 0.1066
250 : USD 0.0767

679 - Warehouse 2


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 397
Multiples : 1

Stock Image

BC337-25
Diotec

397 : USD 0.0366
500 : USD 0.0362
1000 : USD 0.0339
2000 : USD 0.0285
4000 : USD 0.0261
8000 : USD 0.021
12000 : USD 0.0183
28000 : USD 0.0179

12511 - Warehouse 3


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 1247
Multiples : 1

Stock Image

BC337-25
Diotec

1247 : USD 0.0738
2500 : USD 0.0716
5000 : USD 0.0505
10000 : USD 0.0491

Read More Specifications

     
Manufacturer
Product Category
Case
Kind Of Package
Mounting
Polarisation
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Current Gain
Power Dissipation
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Additional Infomation About Product

BC337 SERIES www.centralsemi.com SILICON DESCRIPTION: NPN TRANSISTORS The CENTRAL SEMICONDUCTOR BC337 series devices are silicon NPN transistors designed for general purpose amplifier and switching applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO Emitter-Base Voltage V 5.0 V EBO Continuous Collector Current I 800 mA C Power Dissipation P 625 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 200 C/W JA Thermal Resistance 83.3 C/W JC ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I V=45V 100 nA CES CE I V=30V 100 nA CBO CB I V=4.0V 100 nA EBO EB BV I=100A 50 V CES C BV I=10mA 45 V CEO C BV I=10A 5.0 V EBO E V I =500mA, I=50mA 0.7 V CE(SAT) C B V V =1.0V, I=300mA 1.2 V BE(ON) CE C h V =1.0V, I =100mA (BC337) 100 630 FE CE C h V =1.0V, I =100mA (BC337-16) 100 250 FE CE C h V =1.0V, I =100mA (BC337-25) 160 400 FE CE C h V =1.0V, I =100mA (BC337-40) 250 630 FE CE C h V =1.0V, I=300mA 60 FE CE C f V =5.0V, I =10mA, f=100MHz 210 MHz T CE C C V =10V, I =0, f=1.0MHz 15 pF ob CB E R2 (6-August 2014)BC337 SERIES SILICON NPN TRANSISTORS TO-92 CASE - MECHANICAL OUTLINE LEAD CODE: 1) Collector 2) Base 3) Emitter MARKING: FULL PART NUMBER R2 (6-August 2014) www.centralsemi.com

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Diotec may also be referenced as

(DIOTEC)
Diotec Electronics
DIOTEC SEMICONDUCTOR
DIOTEC SEMICONDUCTOR AG

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