BC817-40 Diotec

BC817-40 electronic component of Diotec
BC817-40 Diotec
BC817-40 Bipolar Transistors - BJT
BC817-40  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of BC817-40 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. BC817-40 Bipolar Transistors - BJT are a product manufactured by Diotec. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

Part No. BC817-40
Manufacturer: Diotec
Category: Bipolar Transistors - BJT
Description: Transistors (NPN/PNP) NPN 500mA 45V SOT-23 RoHS
Datasheet: BC817-40 Datasheet (PDF)
Price (USD)
9000: USD 0.0323 ea
Line Total: USD 290.7 
Availability : 523800
  
Ship by Fri. 24 Oct to Thu. 30 Oct
QtyUnit Price
9000$ 0.0323
12000$ 0.0287
12000$ 0.0263
15000$ 0.0248
21000$ 0.0225
30000$ 0.0214
75000$ 0.0188
150000$ 0.0173
300000$ 0.0159

Availability 81424
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.1475
10$ 0.09
100$ 0.0563
500$ 0.0384
1000$ 0.0345
3000$ 0.0253
9000$ 0.0209
24000$ 0.0198
45000$ 0.0187


Availability 270282
Ship by Wed. 22 Oct to Fri. 24 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.126
10$ 0.1134
50$ 0.0784
100$ 0.0658
500$ 0.042


Availability 310300
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 5989
Multiples : 1
QtyUnit Price
5989$ 0.0434
7693$ 0.0338
9346$ 0.0278
24000$ 0.0235


Availability 523800
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0323
12000$ 0.0287
12000$ 0.0263
15000$ 0.0248
21000$ 0.0225
30000$ 0.0214
75000$ 0.0188
150000$ 0.0173
300000$ 0.0159


Availability 48791
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 10600
Multiples : 100
QtyUnit Price
10600$ 0.0247
25200$ 0.0216
37800$ 0.0201


Availability 23280
Ship by Fri. 24 Oct to Thu. 30 Oct
MOQ : 9000
Multiples : 3000
QtyUnit Price
9000$ 0.0386
9000$ 0.0378
9000$ 0.0291

   
Manufacturer
Product Category
Brand
Rohs
Package
Transistor Type
Current - Collector Ic Max
Voltage - Collector Emitter Breakdown Max
Power - Max
LoadingGif
 
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We are delighted to provide the BC817-40 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BC817-40 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product 300mW, NPN Small Signal Transistor FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Pb free and RoHS complian - Green compound (Halogen free) with suffix on packing code and prefix on date code MECHANICAL DATA - Case: SOT- 23 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed: 260C/10s SOT-23 - Weight: 0.008gram (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT P Power dissipation 300 mW D Collector-Base Voltage V 50 V CBO Collector-Emitter Voltage V 45 V CEO V Emitter-Base Voltage 5 V EBO Collector Current I 500 mA C Thermal Resistance (Junction to Ambient) R 417 C JA Junction Temperature T 150 C J Storage Temperature Range T -55 to + 150 C STG Notes: 1. Valid provided that electrodes are kept at ambient temperature PARAMETER BC817-16 BC817-25 BC817-40 SYMBOL UNIT Collector-Base Breakdown Voltage I = 10A I = 0 V 50 V C E (BR)CBO I = 10mA I = 0 V Collector-Emitter Breakdown Voltage 45 V C B (BR)CEO Emitter-Base Breakdown Voltage I = 1A I = 0 V 5 V E C (BR)EBO Collector Cut-off Current V = 45V I = 0 I 0.1 A CB E CBO Emitter Cut-off Current V = 4V I = 0 I 0.1 A EB C EBO Collector-Emitter Saturation Voltage I = 500mA I = 50 mA V 0.7 V C B CE(sat) I = 500mA I = 50 mA V Base-Emitter Saturation Voltage 1.2 V C B BE(sat) V = 5V I = 10mA f 100 Transition Frequency f= 100MHz MHz CE C T Junction Capacitance V =10V f= 1.0MHz C 10 pF CB CBO V = 1V I = 100mA 100 400 600 CE C DC Current Gain h FE V = 1V I = 100mA >40 160 250 CE C h DC Current Gain 100-250 160-400 250-600 FE Vce=1V Ic=500mA h 40 Min. DC Current Gain FE Version: G14 Document Number: DS S1404005BC817-16/-25/-40 Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) Fig. 2 Collector-Emitter Saturation Voltage VS. Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 10.00 o 25 C 1 1.00 0.1 0.10 0.01 V = 5 V CE 0.001 0.01 0 100 200 300 400 500 0.0 0.1 0.2 0.3 0.4 0.5 0.6 h FE V Collector Emitter Voltage (V) CE(sat) , Fig. 3 Base-Emitter Saturation Voltage Fig. 3 Fig. 4 Base-Emitter On Voltage VS. Collector Current VS. Collector Current 1000 1.000 100 0.100 o 25 C o 25 C 10 0.010 0.001 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 V , Base-Emitter on Voltage (V) BE(sat) V , Base-Emitter Voltage (V) BE Fig. 5 Collector-Base Capacitance VS. Fig. 5 Collector-Base Voltage 40 30 20 10 0 0 4 8 12 16 20 24 28 V , Collector-Base Voltage (V) CB Version: G14 Document Number: DS S1404005 I , Collector Current (mA) C I , Collector Current (A) Collector-Base Capacitance (pF) C I Collector Current (mA) C , I , Collector Current (A) C

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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